The package Internal contains functions and auxiliary models that are necessary for the Spice3 models. The package should not be used by the users of the Spice3-library.
Extends from Modelica.Icons.InternalPackage (Icon for an internal package (indicating that the package should not be directly utilized by user)).
| Name | Description |
|---|---|
BJT | Bipolar junction transistor, obsolete, use model BJT2 |
Bjt … | Records and functions for bjt model |
BJT2 | Bipolar junction transistor |
Bjt3 … | Records and functions for bjt model, obsolete |
C_SEMI | Semiconductor capacitor |
Csemiconductor … | |
DIODE | Diode model |
Diode … | Records and functions for diode model |
Fet … | |
Functions … | Equations for semiconductor calculation |
JFET | Junction Field-Effect Transistor |
Jfet … | Records and functions for Jfet |
MaterialParameters | |
Model … | Device Temperature |
ModelcardBJT | Record with technology parameters (.model), obsolete model, please use ModelcardBJT2 |
ModelcardBJT2 | Record with technology parameters (.model) |
ModelcardC | Record with technology parameters (.model) |
ModelcardDIODE | Record with technology parameters (.model) |
ModelcardJFET | Record with technology parameters (.model) |
ModelcardMOS | Record with technology parameters (.model) |
ModelcardMOS2 | Record with technology parameters (.model) |
ModelcardR | Record with technology parameters (.model) |
MOS | Metal-Oxide Semiconductor Field-Effect Transistor |
Mos … | Records and functions for MOSFETs level 1,2,3,6 |
Mos1 … | Records and functions for MOSFETs level 1 |
MOS2 | Metal-Oxide Semiconductor Field-Effect Transistor |
Mos2 … | Records and functions for MOSFETs level 2 |
Mosfet … | Functions and records for MOSFETs |
R_SEMI | Semiconductor resistor |
Rsemiconductor … | Records and functions for semiconductor resistor model |
SpiceConstants | General constants of SPICE simulator |
SpiceRoot … | Basic records and functions |
MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
| Type | Name | Default | Description |
|---|---|---|---|
Integer | mtype | MOSFET type: 0 - N channel, 1 - P channel | |
Length | L | 1e-4 | Length |
Length | W | 1e-4 | Width |
Area | AD | 0 | Area of the drain diffusion |
Area | AS | 0 | Area of the source diffusion |
Length | PD | 0 | Perimeter of the drain junction |
Length | PS | 0 | Perimeter of the source junction |
Real | NRD | 1 | Number of squares of the drain diffusions |
Real | NRS | 1 | Number of squares of the source diffusions |
Integer | OFF | 0 | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC | Initial condition values, not implemented yet | |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardMOS | modelcard | MOSFET modelcard | |
final Mos1ModelLineParams | p | Mos1.mos1RenameParameters(modelcard, C) | Model line parameters |
final Mosfet | m | Mos1.mos1RenameParametersDev(modelcard, mtype, W, L, AS, AS, PD, PS, NRD, NRS, OFF, IC, TEMP) | Renamed parameters |
final Integer | m_type | if 0.5 < m.m_bPMOS then -1 else 1 | Type of the transistor |
final MosModelLineVariables | vp | Mos1.mos1ModelLineParamsInitEquations(p, C, m_type) | Model line variables |
final Mos1Calc | c1 | Mos.mosCalcInitEquations(p, C, vp, m) | Precalculated parameters |
final Mos1Calc | c2 | Mos.mosCalcCalcTempDependencies(p, C, vp, m, c1, m_type) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
PositivePin | B | bulk node |
Modelcard parameters for MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
parameter Voltage | VTO | Zero-bias threshold voltage, default 0 |
parameter Transconductance | KP | Transconductance parameter, default 2e-5 |
parameter Real | GAMMA | Bulk threshold parameter, default 0 |
parameter Voltage | PHI | Surface potential, default 0.6 |
parameter InversePotential | LAMBDA | Channel-length modulation, default 0 |
parameter Resistance | RD | Drain ohmic resistance, default 0 |
parameter Resistance | RS | Source ohmic resistance, default 0 |
parameter Capacitance | CBD | Zero-bias B-D junction capacitance, default 0 |
parameter Capacitance | CBS | Zero-bias B-S junction capacitance, default 0 |
parameter Current | IS | Bulk junction saturation current |
parameter Voltage | PB | Bulk junction potential |
parameter Permittivity | CGSO | Gate-source overlap capacitance per meter channel width |
parameter Permittivity | CGDO | Gate-drain overlap capacitance per meter channel width |
parameter Permittivity | CGBO | Gate-bulk overlap capacitance per meter channel width |
parameter Resistance | RSH | Drain and source diffusion sheet resistance |
parameter CapacitancePerArea | CJ | Zero-bias bulk junction bottom cap. per sq-meter of junction area |
parameter Real | MJ | Bulk junction bottom grading coefficient |
parameter Permittivity | CJSW | Zero-bias junction sidewall cap. per meter of junction perimeter |
parameter Real | MJSW | Bulk junction sidewall grading coefficient |
parameter CurrentDensity | JS | Bulk junction saturation current per sq-meter of junction area |
parameter Length | TOX | Oxide thickness, default 1e-7 |
parameter Real | NSUB | Substrate doping, default 0 |
parameter PerArea_cm | NSS | Surface state density |
parameter Real | TPG | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
parameter Length | LD | Lateral diffusion |
parameter Area_cmPerVoltageSecond | UO | Surface mobility |
parameter Real | KF | Flicker noise coefficient |
parameter Real | AF | Flicker noise exponent |
parameter Real | FC | Coefficient for forward-bias depletion capacitance formula |
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
constant Integer | LEVEL | Model level: Shichman-Hodges |
MOSFET model, both N and P channel, LEVEL 2
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
| Type | Name | Default | Description |
|---|---|---|---|
Integer | mtype | MOSFET type: 0 - N channel, 1 - P channel | |
Length | L | 1e-4 | Length |
Length | W | 1e-4 | Width |
Area | AD | 0 | Area of the drain diffusion |
Area | AS | 0 | Area of the source diffusion |
Length | PD | 0 | Perimeter of the drain junction |
Length | PS | 0 | Perimeter of the source junction |
Real | NRD | 1 | Number of squares of the drain diffusions |
Real | NRS | 1 | Number of squares of the source diffusions |
Integer | OFF | 0 | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC_VDS | -1e+40 | Initial condition value (VDS, not implemented yet) |
Voltage | IC_VGS | -1e+40 | Initial condition value (VGS, not implemented yet) |
Voltage | IC_VBS | -1e+40 | Initial condition value (VBS, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardMOS2 | modelcard | MOSFET modelcard | |
final Mos2ModelLineParams | p | Spice3.Internal.Mos2.mos2RenameParametersRevised(modelcard) | Model line parameters |
final Mosfet | m | Spice3.Internal.Mosfet.mosfetRenameParametersDev(W, L, AD, AS, PD, PS, NRD, NRS, OFF, IC_VDS, IC_VGS, IC_VBS, UIC, TEMP) | Renamed parameters |
final Mosfet | m1 | Spice3.Internal.Mosfet.mosfetInitEquations(m) | |
final Integer | m_type | if 0.5 < m.m_bPMOS then -1 else 1 | Type of the transistor |
final Mos2ModelLineParams | p1 | Spice3.Internal.Mos2.mos2ModelLineParamsInitEquationsRevised(p, m_type) | Model line variables |
final Mos2Calc | c11 | Spice3.Internal.Mos.mos2CalcInitEquationsRevised(p1, m1) | Precalculated parameters |
final Mos2Calc | c22 | Spice3.Internal.Mos.mos2CalcCalcTempDependenciesRevised(p1, m1, c11, m_type) | Precalculated parameters |
Voltage | IC | Initial condition values, not implemented yet | |
final Mos2ModelLineVariables | vp | Spice3.Internal.Mos2.mos2ModelLineParamsInitEquations(p, C, m_type) | Model line variables |
final Mos2Calc | c1 | Spice3.Internal.Mos.mos2CalcInitEquations(p, C, vp, m) | Precalculated parameters |
final Mos2Calc | c2 | Spice3.Internal.Mos.mos2CalcCalcTempDependencies(p, C, vp, m, c1, m_type) | Precalculated parameters |
final Mos2ModelLineParams | p_obsolete | Spice3.Internal.Mos2.mos2RenameParameters(modelcard, C) | Model line parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
PositivePin | B | bulk node |
Modelcard parameters for MOSFET model, both N and P channel, LEVEL 2
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardMOS (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter Voltage | VTO | Zero-bias threshold voltage, default 0 |
parameter Transconductance | KP | Transconductance parameter, default 2e-5 |
parameter Real | GAMMA | Bulk threshold parameter, default 0 |
parameter Voltage | PHI | Surface potential, default 0.6 |
parameter InversePotential | LAMBDA | Channel-length modulation, default 0 |
parameter Resistance | RD | Drain ohmic resistance, default 0 |
parameter Resistance | RS | Source ohmic resistance, default 0 |
parameter Capacitance | CBD | Zero-bias B-D junction capacitance, default 0 |
parameter Capacitance | CBS | Zero-bias B-S junction capacitance, default 0 |
parameter Current | IS | Bulk junction saturation current |
parameter Voltage | PB | Bulk junction potential |
parameter Permittivity | CGSO | Gate-source overlap capacitance per meter channel width |
parameter Permittivity | CGDO | Gate-drain overlap capacitance per meter channel width |
parameter Permittivity | CGBO | Gate-bulk overlap capacitance per meter channel width |
parameter Resistance | RSH | Drain and source diffusion sheet resistance |
parameter CapacitancePerArea | CJ | Zero-bias bulk junction bottom cap. per sq-meter of junction area |
parameter Real | MJ | Bulk junction bottom grading coefficient |
parameter Permittivity | CJSW | Zero-bias junction sidewall cap. per meter of junction perimeter |
parameter Real | MJSW | Bulk junction sidewall grading coefficient |
parameter CurrentDensity | JS | Bulk junction saturation current per sq-meter of junction area |
parameter Length | TOX | Oxide thickness, default 1e-7 |
parameter Real | NSUB | Substrate doping, default 0 |
parameter PerArea_cm | NSS | Surface state density |
parameter Real | TPG | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
parameter Length | LD | Lateral diffusion |
parameter Area_cmPerVoltageSecond | UO | Surface mobility |
parameter Real | KF | Flicker noise coefficient |
parameter Real | AF | Flicker noise exponent |
parameter Real | FC | Coefficient for forward-bias depletion capacitance formula |
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
constant Integer | LEVEL | Model level: Shichman-Hodges |
parameter PerArea_cm | NFS | Fast surface state density |
parameter Length | XJ | Metallurgical junction depth |
parameter ElectricFieldStrength_cm | UCRIT | Critical field for mobility degradation (MOS2 only) |
parameter Real | UEXP | Critical field exponent in mobility degradation (MOS2 only) |
parameter Velocity | VMAX | Maximum drift velocity of carries |
parameter Real | NEFF | Total channel charge (fixed and mobile) coefficient (MOS2 only) |
parameter Real | DELTA | Width effect on threshold voltage |
Bipolar junction transistor model, both NPN and PNP
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Electrical.Spice3.Interfaces.ConditionalSubstrate (Partial model to include a conditional substrate node).
| Type | Name | Default | Description |
|---|---|---|---|
Boolean | useSubstrateNode | false | =true, if SubstrateNode is enabled |
Real | TBJT | Type of transistor (NPN=1, PNP=-1) | |
Real | AREA | 1 | Area factor |
Boolean | OFF | false | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
Voltage | IC_VBE | -1e+40 | Initial condition value (VBC, not implemented yet) |
Voltage | IC_VCE | -1e+40 | Initial condition value (VBE, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
Boolean | SENS_AREA | false | Flag to request sensitivity WRT area, not implemented yet |
ModelcardBJT2 | modelcard | BJT modelcard | |
final BjtModelLineParams | p | Spice3.Internal.Bjt.bjtRenameParameters(modelcard, TBJT) | Model line parameters |
final Bjt | dev | Spice3.Internal.Bjt.bjtRenameParametersDev(AREA, OFF, IC_VBE, IC_VCE, UIC, SENS_AREA, TEMP) | Renamed parameters |
final BjtModelLineParams | p1 | Spice3.Internal.Bjt.bjtModelLineInitEquations(p) | Model line variables |
final Bjt | dev1 | Spice3.Internal.Bjt.bjtInitEquations(dev, p1) | Precalculated parameters |
final BjtCalc | c | Spice3.Internal.Bjt.bjtCalcTempDependencies(dev1, p1) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | B | Base node |
PositivePin | C | Collector node |
NegativePin | E | Emitter node |
PositivePin | S |
Modelcard parameters for BJT model, both PNP and NPN
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
parameter Temp_C | TNOM | Parameter measurement temperature |
parameter Current | IS | Transport saturation current |
parameter Real | BF | Ideal maximum forward beta F |
parameter Real | NF | Forward current emission coefficientF |
parameter Real | NE | B-E leakage emission coefficient |
parameter Current | ISE | B-E leakage saturation current, default = 0 |
constant Real | C2 | Obsolete parameter name, default = 0 |
parameter Current | ISC | B-C leakage saturation current, default = 0 |
constant Real | C4 | Obsolete parameter name, default = 0 |
parameter Real | BR | Ideal maximum reverse beta |
parameter Real | NR | Reverse current emission coefficient |
parameter Real | NC | B-C leakage emission coefficient |
parameter Voltage | VAF | Forward Early voltage |
parameter Current | IKF | Forward beta roll-off corner current |
parameter Voltage | VAR | Reverse Early voltage |
parameter Current | IKR | Reverse beta roll-off corner current |
parameter Resistance | RE | Emitter resistance |
parameter Resistance | RC | Collector resistance |
parameter Current | IRB | Current for base resistance = (rb+rbm)/2 |
parameter Resistance | RB | Zero bias base resistance |
parameter Resistance | RBM | Minimum base resistance, default = 0.0 |
parameter Capacitance | CJE | Zero bias B-E depletion capacitance |
parameter Voltage | VJE | B-E built in potential |
parameter Real | MJE | B-E junction exponential factor |
parameter Time | TF | Ideal forward transit time |
parameter Real | XTF | Coefficient for bias dependence of TF |
parameter Current | ITF | High current dependence of TF, |
parameter Voltage | VTF | Voltage giving VBC dependence of TF |
parameter Frequency | PTF | Excess phase at freq=1/(TF*2*Pi) Hz |
parameter Capacitance | CJC | Zero bias B-C depletion capacitance |
parameter Voltage | VJC | B-C built in potential |
parameter Real | MJC | B-C junction grading coefficient |
parameter Real | XCJC | Fraction of B-C cap to internal base |
parameter Time | TR | Ideal reverse transit time |
parameter Capacitance | CJS | Zero bias C-S capacitance |
parameter Voltage | VJS | Substrate junction built-in potential |
parameter Real | MJS | Substrate junction grading coefficient |
parameter Real | XTB | Forward and reverse beta temperature exponent |
parameter GapEnergy | EG | Energy gap for IS temperature effect on IS |
parameter Real | XTI | Temperature exponent for IS |
parameter Real | KF | Flicker Noise Coefficient |
parameter Real | AF | Flicker Noise Exponent |
parameter Real | FC | Forward bias junction fit parameter |
This model is obsolete, please use BJT2
Bipolar junction transistor model
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.ObsoleteModel (Icon for classes that are obsolete and will be removed in later versions).
| Type | Name | Default | Description |
|---|---|---|---|
Real | TBJT | Type of transistor (NPN=1, PNP=-1) | |
Real | AREA | 1 | Area factor |
Boolean | OFF | false | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
Voltage | IC_VCE | Initial condition value (VBE, not implemented yet | |
Voltage | IC_VBE | Initial condition value (VBC, not implemented yet | |
Temp_C | TEMP | 27 | Operating temperature of the device |
Boolean | SENS_AREA | false | Flag to request sensitivity WRT area, not implemented yet |
ModelcardBJT | modelcard | BJT modelcard | |
final BjtModelLineParams | p | Spice3.Internal.Bjt3.bjtRenameParameters(modelcard, Con, TBJT) | Model line parameters |
final Bjt | p1 | Spice3.Internal.Bjt3.bjtRenameParametersDev(AREA, OFF, IC_VBE, IC_VCE, SENS_AREA) | Renamed parameters |
final Model | m | Spice3.Internal.Bjt3.bjtRenameParametersDevTemp(TEMP) | Renamed parameters |
final BjtModelLineVariables | vl | Spice3.Internal.Bjt3.bjtModelLineInitEquations(p) | Model line variables |
final Bjt3Calc | c | Spice3.Internal.Bjt3.bjt3CalcTempDependencies(p1, p, m, vl) | Precalculated parameters |
final BjtVariables | v | Spice3.Internal.Bjt3.bjtInitEquations(p1, p, vl) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | B | Base node |
PositivePin | C | Collector node |
NegativePin | E | Emitter node |
This record is obsolete, please use ModelcardBJT2
Modelcard parameters for BJT model, both PNP and NPN
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Icons.ObsoleteModel (Icon for classes that are obsolete and will be removed in later versions).
| Type | Name | Description |
|---|---|---|
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
parameter Current | IS | Transport saturation current |
parameter Real | BF | Ideal maximum forward beta F |
parameter Real | NF | Forward current emission coefficientF |
parameter Real | NE | B-E leakage emission coefficient |
parameter Current | ISE | B-E leakage saturation current, default = 0 |
constant Real | C2 | Obsolete parameter name, default = 0 |
parameter Current | ISC | B-C leakage saturation current, default = 0 |
constant Real | C4 | Obsolete parameter name, default = 0 |
parameter Real | BR | Ideal maximum reverse beta |
parameter Real | NR | Reverse current emission coefficient |
parameter Real | NC | B-C leakage emission coefficient |
parameter Voltage | VAF | Forward Early voltage |
parameter Current | IKF | Forward beta roll-off corner current |
parameter Voltage | VAR | Reverse Early voltage |
parameter Current | IKR | Reverse beta roll-off corner current |
parameter Resistance | RE | Emitter resistance |
parameter Resistance | RC | Collector resistance |
parameter Current | IRB | Current for base resistance = (rb+rbm)/2 |
parameter Resistance | RB | Zero bias base resistance |
parameter Resistance | RBM | Minimum base resistance, default = 0.0 |
parameter Capacitance | CJE | Zero bias B-E depletion capacitance |
parameter Voltage | VJE | B-E built in potential |
parameter Real | MJE | B-E junction exponential factor |
parameter Time | TF | Ideal forward transit time |
parameter Real | XTF | Coefficient for bias dependence of TF |
parameter Current | ITF | High current dependence of TF, |
parameter Voltage | VTF | Voltage giving VBC dependence of TF |
parameter Temp_C | PTF | Excess phase at freq=1/(TF*2*Pi) Hz |
parameter Capacitance | CJC | Zero bias B-C depletion capacitance |
parameter Voltage | VJC | B-C built in potential |
parameter Real | MJC | B-C junction grading coefficient |
parameter Real | XCJC | Fraction of B-C cap to internal base |
parameter Time | TR | Ideal reverse transit time |
parameter Capacitance | CJS | Zero bias C-S capacitance |
parameter Voltage | VJS | Substrate junction built-in potential |
parameter Real | MJS | Substrate junction grading coefficient |
parameter Real | XTB | Forward and reverse beta temperature exponent |
parameter GapEnergy | EG | Energy gap for IS temperature effect on IS |
parameter Real | XTI | Temperature exponent for IS |
parameter Real | KF | Flicker Noise Coefficient |
parameter Real | AF | Flicker Noise Exponent |
parameter Real | FC | Forward bias junction fit parameter |
JFET model, both N and P channel
The package Internal is not for user access. There all function, records and data are stored, that are needed for modeling the semiconductor models of the package Semiconductors.
| Type | Name | Default | Description |
|---|---|---|---|
Integer | mtype | JFET type: 0 - N channel, 1 - P channel | |
Real | AREA | Number of parallel connected identical elements | |
Boolean | OFF | false | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC_VDS | -1e+40 | Initial condition value (VDS, not implemented yet) |
Voltage | IC_VGS | -1e+40 | Initial condition value (VGS, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardJFET | modelcard | JFET modelcard | |
final JfetModelLine | p | Modelica.Electrical.Spice3.Internal.Jfet.jfetRenameParameters(modelcard) | Model line parameters |
final Fet | m | Modelica.Electrical.Spice3.Internal.Fet.fetRenameParametersDev(AREA, OFF, IC_VDS, IC_VGS, UIC, TEMP) | Renamed parameters |
final Integer | m_type | if 0.5 < mtype then -1 else 1 | Type of the transistor |
final JfetModelLine | p1 | Modelica.Electrical.Spice3.Internal.Jfet.jfetInitEquations(m, p) | Precalculated parameters |
final JfetModelLine | p2 | Modelica.Electrical.Spice3.Internal.Jfet.jfetModelLineInitEquations(p1) | Model line variables |
final Fet | m1 | Modelica.Electrical.Spice3.Internal.Jfet.jfetCalcTempDependencies(m, p2) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
Modelcard parameters for JFET model, both N and P channel
The package Internal is not for user access. There all function, records and data are stored, that are needed for modeling the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
parameter Capacitance | CGS | Zero-bias G-S junction capacitance, default 0 |
parameter Capacitance | CGD | Zero-bias G-D junction capacitance, default 0 |
parameter Current | IS | Saturation current of pn junctions |
parameter Real | FC | Coefficient for forward-bias depletion capacitance formula |
parameter Resistance | RD | Drain ohmic resistance, default 0 |
parameter Resistance | RS | Source ohmic resistance, default 0 |
parameter Temp_C | TNOM | Parameter measurement temperature |
parameter Voltage | VTO | Zero-bias threshold voltage, default -2 |
parameter InversePotential | B | Dotierungsverlauf parameter, default 1 |
parameter Real | BETA | Output admittance parameter, default 1e-4 |
parameter InversePotential | LAMBDA | Channel-length modulation, default 0 |
parameter Voltage | PB | Junction potential of pn junctions |
parameter Real | AF | Flicker noise exponent |
parameter Real | KF | Flicker noise coefficient |
DIODE model
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Electrical.Analog.Interfaces.TwoPin (Component with two electrical pins).
| Type | Name | Default | Description |
|---|---|---|---|
Real | AREA | 1 | Area factor |
Boolean | OFF | false | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
Voltage | IC | Initial condition value (VD, not implemented yet | |
Temp_C | TEMP | 27 | Operating temperature of the device |
Boolean | SENS_AREA | Flag to request sensitivity WRT area, not implemented yet | |
ModelcardDIODE | modelcarddiode | DIODE modelcard | |
final DiodeModelLineParams | param | Diode.diodeRenameParameters(modelcarddiode, C) | Model line parameters |
final DiodeParams | dp | Diode.diodeRenameParametersDev(TEMP, AREA, IC, OFF, SENS_AREA) | Renamed parameters |
final Model | m | Diode.diodeRenameParametersDevTemp(TEMP) | Renamed parameters |
final DiodeVariables | c1 | Diode.diodeInitEquations(param) | Precalculated values |
final DiodeCalc | c2 | Diode.diodeCalcTempDependencies(param, dp, m, c1) | Precalculated values |
| Type | Name | Description |
|---|---|---|
PositivePin | p | Positive electrical pin |
NegativePin | n | Negative electrical pin |
Modelcard parameters for DIODE model
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
parameter Current | IS | Saturation Current |
parameter Resistance | RS | Ohmic resistance |
parameter Real | N | Emission coefficient |
parameter Time | TT | Transit time |
parameter Capacitance | CJO | Junction capacitance |
parameter Voltage | VJ | Junction Potential |
parameter Real | M | Grading coefficient |
parameter ActivationEnergy | EG | Activation Energy |
parameter Real | XTI | Saturation current temperature exponent |
parameter Real | FC | Forward bias junction fit parameter |
parameter Voltage | BV | Reverse breakdown voltage, default infinity |
parameter Current | IBV | Current at reverse breakdown voltage |
parameter Temp_C | TNOM | Parameter measurement temperature |
parameter Real | KF | Flicker noise coefficient |
parameter Real | AF | Flicker noise exponent |
parameter Conductance | G | Ohmic conductance |
Semiconductor resistance model
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n).
| Type | Name | Default | Description |
|---|---|---|---|
Resistance | R | -1e+40 | Resistance, if specified, geometrical information is overwritten |
Temp_C | TEMP | -1e+40 | Temperature of resistor |
Length | L | -1e+40 | Length of the resistor |
Length | W | -1e+40 | Width of the resistor, default DEFW (modelcard) |
Boolean | SENS_AREA | false | Parameter for sensitivity analyses, not implemented yet |
ModelcardR | modelcard | Resistor modelcard | |
final ResistorModelLineParams | lp | Rsemiconductor.resistorRenameParameters(modelcard, C) | Model Line Parameters |
final ResistorParams | rp | Rsemiconductor.resistorRenameParametersDev(R, W, L, TEMP, SENS_AREA, C) | Renamed parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | p | Positive electrical pin |
NegativePin | n | Negative electrical pin |
Modelcard parameters for semiconductor resistance model
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
parameter LinearTemperatureCoefficientResistance | TC1 | First order temperature coefficient |
parameter QuadraticTemperatureCoefficientResistance | TC2 | Second order temperature coefficient |
parameter Resistance | RSH | Sheet resistance |
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
parameter Length | DEFW | Default device width |
parameter Length | NARROW | Narrowing of resistor due to side etching |
Semiconductor capacitance model
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n).
| Type | Name | Default | Description |
|---|---|---|---|
Capacitance | C | -1e+40 | Capacitance, if specified, geometrical information is overwritten |
Temp_C | TEMP | 27 | Temperature of capacitor |
Length | L | Length of the capacitor | |
Length | W | -1e+40 | Width of the capacitor, default DEFW (modelcard) |
Boolean | SENS_AREA | false | Parameter for sensitivity analyses, not implemented yet |
Voltage | IC | 0 | Initial value |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
ModelcardC | modelcard | Capacitor modelcard | |
final CapacitorModelLineParams | lp | Modelica.Electrical.Spice3.Internal.Csemiconductor.capacitorRenameParameters(modelcard) | Model Line Parameters |
final Capacitor | cp | Modelica.Electrical.Spice3.Internal.Csemiconductor.capacitorRenameParametersDev(C, W, L, TEMP, SENS_AREA, lp) | Renamed parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | p | Positive electrical pin |
NegativePin | n | Negative electrical pin |
Modelcard parameters for semiconductor capacitance model
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
parameter CapacitancePerArea | CJ | Junction bottom capacitance F/meters2 |
parameter Permittivity | CJSW | Junction sidewall capacitance F/meters |
parameter Length | DEFW | Default device width |
parameter Length | NARROW | Narrowing due to side etching |
General constants used by SPICE
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
constant Real | EPSSIL | |
constant Real | EPSOX | |
constant Charge | CHARGE | |
constant Temp_K | CONSTCtoK | |
constant HeatCapacity | CONSTboltz | |
constant Temp_K | REFTEMP | |
constant Real | CONSTroot2 | |
constant Real | CONSTvt0 | |
constant Real | CONSTKoverQ | |
constant Real | CONSTe | |
constant Conductance | CKTgmin | |
constant Temp_K | CKTnomTemp | |
constant Temp_K | CKTtemp | |
constant Area | CKTdefaultMosAD | |
constant Area | CKTdefaultMosAS | |
constant Length | CKTdefaultMosL | |
constant Length | CKTdefaultMosW | |
constant Real | CKTreltol | |
constant Real | CKTabstol | |
constant Real | CKTvolttol | |
constant Real | CKTtemptol |
Definition of Material parameters
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Extends from Modelica.Icons.Record (Icon for records).
| Type | Name | Description |
|---|---|---|
constant GapEnergy | EnergyGapSi | |
constant GapEnergyPerTemperature | FirstBandCorrFactorSi | |
constant Temperature | SecondBandCorrFactorSi | |
constant GapEnergy | BandCorrFactorT300 | |
constant PerVolume | IntCondCarrDensity |
Generated 2018-12-12 12:10:54 EST by MapleSim.