ModelcardBJT2

Record with technology parameters (.model)

Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

Modelcard parameters for BJT model, both PNP and NPN

The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters (41)

TNOM

Value: 27

Type: Temp_C (°C)

Description: Parameter measurement temperature

IS

Value: 1e-16

Type: Current (A)

Description: Transport saturation current

BF

Value: 100.00

Type: Real

Description: Ideal maximum forward beta F

NF

Value: 1.0

Type: Real

Description: Forward current emission coefficientF

NE

Value: 1.5

Type: Real

Description: B-E leakage emission coefficient

ISE

Value: -1e40

Type: Current (A)

Description: B-E leakage saturation current, default = 0

ISC

Value: -1e40

Type: Current (A)

Description: B-C leakage saturation current, default = 0

BR

Value: 1.0

Type: Real

Description: Ideal maximum reverse beta

NR

Value: 1.0

Type: Real

Description: Reverse current emission coefficient

NC

Value: 2.0

Type: Real

Description: B-C leakage emission coefficient

VAF

Value: 0.0

Type: Voltage (V)

Description: Forward Early voltage

IKF

Value: 0.0

Type: Current (A)

Description: Forward beta roll-off corner current

VAR

Value: 0.0

Type: Voltage (V)

Description: Reverse Early voltage

IKR

Value: 0.0

Type: Current (A)

Description: Reverse beta roll-off corner current

RE

Value: 0.0

Type: Resistance (Ω)

Description: Emitter resistance

RC

Value: 0.0

Type: Resistance (Ω)

Description: Collector resistance

IRB

Value: 0.0

Type: Current (A)

Description: Current for base resistance = (rb+rbm)/2

RB

Value: 0.0

Type: Resistance (Ω)

Description: Zero bias base resistance

RBM

Value: 0.0

Type: Resistance (Ω)

Description: Minimum base resistance, default = 0.0

CJE

Value: 0.0

Type: Capacitance (F)

Description: Zero bias B-E depletion capacitance

VJE

Value: 0.75

Type: Voltage (V)

Description: B-E built in potential

MJE

Value: 0.33

Type: Real

Description: B-E junction exponential factor

TF

Value: 0.0

Type: Time (s)

Description: Ideal forward transit time

XTF

Value: 0.0

Type: Real

Description: Coefficient for bias dependence of TF

ITF

Value: 0.0

Type: Current (A)

Description: High current dependence of TF,

VTF

Value: 0.0

Type: Voltage (V)

Description: Voltage giving VBC dependence of TF

PTF

Value: 0.0

Type: Frequency (Hz)

Description: Excess phase at freq=1/(TF*2*Pi) Hz

CJC

Value: 0.0

Type: Capacitance (F)

Description: Zero bias B-C depletion capacitance

VJC

Value: 0.75

Type: Voltage (V)

Description: B-C built in potential

MJC

Value: 0.33

Type: Real

Description: B-C junction grading coefficient

XCJC

Value: 1.0

Type: Real

Description: Fraction of B-C cap to internal base

TR

Value: 0.0

Type: Time (s)

Description: Ideal reverse transit time

CJS

Value: 0.0

Type: Capacitance (F)

Description: Zero bias C-S capacitance

VJS

Value: 0.75

Type: Voltage (V)

Description: Substrate junction built-in potential

MJS

Value: 0.0

Type: Real

Description: Substrate junction grading coefficient

XTB

Value: 0.0

Type: Real

Description: Forward and reverse beta temperature exponent

EG

Value: 1.11

Type: GapEnergy (eV)

Description: Energy gap for IS temperature effect on IS

XTI

Value: 3.0

Type: Real

Description: Temperature exponent for IS

KF

Value: 0.0

Type: Real

Description: Flicker Noise Coefficient

AF

Value: 1.0

Type: Real

Description: Flicker Noise Exponent

FC

Value: 0.5

Type: Real

Description: Forward bias junction fit parameter

Used in Components (1)

BJT2

Modelica.Electrical.Spice3.Internal

Bipolar junction transistor

Extended by (1)

ModelcardBJT

Modelica.Electrical.Spice3.Semiconductors

Record for the specification of modelcard parameters