M_PMOSPMOS MOSFET device |
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Information
This information is part of the Modelica Standard Library maintained by the Modelica Association.
The model M_PMOS is a P channel MOSFET transistor with fixed level 1: Shichman-Hodges model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Parameters (19)
| mtype |
Value: 1 Type: Integer Description: MOSFET type: 0 - N channel, 1 - P channel |
|---|---|
| L |
Value: 1e-4 Type: Length (m) Description: Length |
| W |
Value: 1e-4 Type: Length (m) Description: Width |
| AD |
Value: 0 Type: Area (m²) Description: Area of the drain diffusion |
| AS |
Value: 0 Type: Area (m²) Description: Area of the source diffusion |
| PD |
Value: 0 Type: Length (m) Description: Perimeter of the drain junction |
| PS |
Value: 0 Type: Length (m) Description: Perimeter of the source junction |
| NRD |
Value: 1 Type: Real Description: Number of squares of the drain diffusions |
| NRS |
Value: 1 Type: Real Description: Number of squares of the source diffusions |
| OFF |
Value: 0 Type: Integer Description: Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC |
Value: Type: Voltage (V) Description: Initial condition values, not implemented yet |
| TEMP |
Value: 27 Type: Temp_C (°C) Description: Operating temperature of the device |
| modelcard |
Value: Type: ModelcardMOS Description: MOSFET modelcard |
| p |
Value: Mos1.mos1RenameParameters(modelcard, C) Type: Mos1ModelLineParams Description: Model line parameters |
| m |
Value: Mos1.mos1RenameParametersDev(modelcard, mtype, W, L, AS, AS, PD, PS, NRD, NRS, OFF, IC, TEMP) Type: Mosfet Description: Renamed parameters |
| m_type |
Value: if m.m_bPMOS > 0.5 then -1 else 1 Type: Integer Description: Type of the transistor |
| vp |
Value: Mos1.mos1ModelLineParamsInitEquations(p, C, m_type) Type: MosModelLineVariables Description: Model line variables |
| c1 |
Value: Mos.mosCalcInitEquations(p, C, vp, m) Type: Mos1Calc Description: Precalculated parameters |
| c2 |
Value: Mos.mosCalcCalcTempDependencies(p, C, vp, m, c1, m_type) Type: Mos1Calc Description: Precalculated parameters |
Connectors (4)
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G |
Type: PositivePin Description: gate node |
|---|---|---|
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D |
Type: PositivePin Description: drain node |
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S |
Type: NegativePin Description: source node |
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B |
Type: PositivePin Description: bulk node |
Components (8)
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modelcard |
Type: ModelcardMOS Description: MOSFET modelcard |
|---|---|---|
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C |
Type: SpiceConstants Description: General constants of SPICE simulator |
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p |
Type: Mos1ModelLineParams Description: Model line parameters |
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m |
Type: Mosfet Description: Renamed parameters |
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vp |
Type: MosModelLineVariables Description: Model line variables |
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c1 |
Type: Mos1Calc Description: Precalculated parameters |
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c2 |
Type: Mos1Calc Description: Precalculated parameters |
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cc |
Type: CurrrentsCapacitances |
Used in Examples (5)
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Modelica.Electrical.Spice3.Examples Simple inverter circuit |
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Modelica.Electrical.Spice3.Examples Two inverters where transistor models use different modelcard instances |
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Modelica.Electrical.Spice3.Examples Four inverters with MOSFET level 1, using private record as model card |
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Modelica.Electrical.Spice3.Examples MOS Nand gate circuit |
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Modelica.Electrical.Spice3.Examples MOS NOR gate circuit |
Extended by (1)
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Modelica.Electrical.Spice3.Examples.InvertersExtendedModel PMOS transistor with specified modelcard |