ModelcardMOS2

Record for the specification of modelcard parameters

Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model

In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.

Parameters (37)

VTO

Value: -1e40

Type: Voltage (V)

Description: Zero-bias threshold voltage, default 0

KP

Value: -1e40

Type: Transconductance (A/V²)

Description: Transconductance parameter, default 2e-5

GAMMA

Value: -1e40

Type: Real

Description: Bulk threshold parameter, default 0

PHI

Value: -1e40

Type: Voltage (V)

Description: Surface potential, default 0.6

LAMBDA

Value: 0

Type: InversePotential (¹/V)

Description: Channel-length modulation, default 0

RD

Value: -1e40

Type: Resistance (Ω)

Description: Drain ohmic resistance, default 0

RS

Value: -1e40

Type: Resistance (Ω)

Description: Source ohmic resistance, default 0

CBD

Value: -1e40

Type: Capacitance (F)

Description: Zero-bias B-D junction capacitance, default 0

CBS

Value: -1e40

Type: Capacitance (F)

Description: Zero-bias B-S junction capacitance, default 0

IS

Value: 1e-14

Type: Current (A)

Description: Bulk junction saturation current

PB

Value: 0.8

Type: Voltage (V)

Description: Bulk junction potential

CGSO

Value: 0.0

Type: Permittivity (F/m)

Description: Gate-source overlap capacitance per meter channel width

CGDO

Value: 0.0

Type: Permittivity (F/m)

Description: Gate-drain overlap capacitance per meter channel width

CGBO

Value: 0.0

Type: Permittivity (F/m)

Description: Gate-bulk overlap capacitance per meter channel width

RSH

Value: 0.0

Type: Resistance (Ω)

Description: Drain and source diffusion sheet resistance

CJ

Value: 0.0

Type: CapacitancePerArea (F/m²)

Description: Zero-bias bulk junction bottom cap. per sq-meter of junction area

MJ

Value: 0.5

Type: Real

Description: Bulk junction bottom grading coefficient

CJSW

Value: 0.0

Type: Permittivity (F/m)

Description: Zero-bias junction sidewall cap. per meter of junction perimeter

MJSW

Value: 0.33

Type: Real

Description: Bulk junction sidewall grading coefficient

JS

Value: 0.0

Type: CurrentDensity (A/m²)

Description: Bulk junction saturation current per sq-meter of junction area

TOX

Value: -1e40

Type: Length (m)

Description: Oxide thickness, default 1e-7

NSUB

Value: -1e40

Type: Real

Description: Substrate doping, default 0

NSS

Value: 0.0

Type: PerArea_cm (¹/cm²)

Description: Surface state density

TPG

Value: 1.0

Type: Real

Description: Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate

LD

Value: 0.0

Type: Length (m)

Description: Lateral diffusion

UO

Value: 600

Type: Area_cmPerVoltageSecond (cm²/(V·s))

Description: Surface mobility

KF

Value: 0

Type: Real

Description: Flicker noise coefficient

AF

Value: 1.0

Type: Real

Description: Flicker noise exponent

FC

Value: 0.5

Type: Real

Description: Coefficient for forward-bias depletion capacitance formula

TNOM

Value: 27

Type: Temp_C (°C)

Description: Parameter measurement temperature, default 27

NFS

Value: 0.0

Type: PerArea_cm (¹/cm²)

Description: Fast surface state density

XJ

Value: 0.0

Type: Length (m)

Description: Metallurgical junction depth

UCRIT

Value: 1e4

Type: ElectricFieldStrength_cm (V/cm)

Description: Critical field for mobility degradation (MOS2 only)

UEXP

Value: 0.0

Type: Real

Description: Critical field exponent in mobility degradation (MOS2 only)

VMAX

Value: 0.0

Type: Velocity (m/s)

Description: Maximum drift velocity of carries

NEFF

Value: 1.0

Type: Real

Description: Total channel charge (fixed and mobile) coefficient (MOS2 only)

DELTA

Value: 0.0

Type: Real

Description: Width effect on threshold voltage