ModelcardMOS2Record for the specification of modelcard parameters |
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Information
This information is part of the Modelica Standard Library maintained by the Modelica Association.
Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Parameters (37)
| VTO |
Value: -1e40 Type: Voltage (V) Description: Zero-bias threshold voltage, default 0 |
|---|---|
| KP |
Value: -1e40 Type: Transconductance (A/V²) Description: Transconductance parameter, default 2e-5 |
| GAMMA |
Value: -1e40 Type: Real Description: Bulk threshold parameter, default 0 |
| PHI |
Value: -1e40 Type: Voltage (V) Description: Surface potential, default 0.6 |
| LAMBDA |
Value: 0 Type: InversePotential (¹/V) Description: Channel-length modulation, default 0 |
| RD |
Value: -1e40 Type: Resistance (Ω) Description: Drain ohmic resistance, default 0 |
| RS |
Value: -1e40 Type: Resistance (Ω) Description: Source ohmic resistance, default 0 |
| CBD |
Value: -1e40 Type: Capacitance (F) Description: Zero-bias B-D junction capacitance, default 0 |
| CBS |
Value: -1e40 Type: Capacitance (F) Description: Zero-bias B-S junction capacitance, default 0 |
| IS |
Value: 1e-14 Type: Current (A) Description: Bulk junction saturation current |
| PB |
Value: 0.8 Type: Voltage (V) Description: Bulk junction potential |
| CGSO |
Value: 0.0 Type: Permittivity (F/m) Description: Gate-source overlap capacitance per meter channel width |
| CGDO |
Value: 0.0 Type: Permittivity (F/m) Description: Gate-drain overlap capacitance per meter channel width |
| CGBO |
Value: 0.0 Type: Permittivity (F/m) Description: Gate-bulk overlap capacitance per meter channel width |
| RSH |
Value: 0.0 Type: Resistance (Ω) Description: Drain and source diffusion sheet resistance |
| CJ |
Value: 0.0 Type: CapacitancePerArea (F/m²) Description: Zero-bias bulk junction bottom cap. per sq-meter of junction area |
| MJ |
Value: 0.5 Type: Real Description: Bulk junction bottom grading coefficient |
| CJSW |
Value: 0.0 Type: Permittivity (F/m) Description: Zero-bias junction sidewall cap. per meter of junction perimeter |
| MJSW |
Value: 0.33 Type: Real Description: Bulk junction sidewall grading coefficient |
| JS |
Value: 0.0 Type: CurrentDensity (A/m²) Description: Bulk junction saturation current per sq-meter of junction area |
| TOX |
Value: -1e40 Type: Length (m) Description: Oxide thickness, default 1e-7 |
| NSUB |
Value: -1e40 Type: Real Description: Substrate doping, default 0 |
| NSS |
Value: 0.0 Type: PerArea_cm (¹/cm²) Description: Surface state density |
| TPG |
Value: 1.0 Type: Real Description: Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
| LD |
Value: 0.0 Type: Length (m) Description: Lateral diffusion |
| UO |
Value: 600 Type: Area_cmPerVoltageSecond (cm²/(V·s)) Description: Surface mobility |
| KF |
Value: 0 Type: Real Description: Flicker noise coefficient |
| AF |
Value: 1.0 Type: Real Description: Flicker noise exponent |
| FC |
Value: 0.5 Type: Real Description: Coefficient for forward-bias depletion capacitance formula |
| TNOM |
Value: 27 Type: Temp_C (°C) Description: Parameter measurement temperature, default 27 |
| NFS |
Value: 0.0 Type: PerArea_cm (¹/cm²) Description: Fast surface state density |
| XJ |
Value: 0.0 Type: Length (m) Description: Metallurgical junction depth |
| UCRIT |
Value: 1e4 Type: ElectricFieldStrength_cm (V/cm) Description: Critical field for mobility degradation (MOS2 only) |
| UEXP |
Value: 0.0 Type: Real Description: Critical field exponent in mobility degradation (MOS2 only) |
| VMAX |
Value: 0.0 Type: Velocity (m/s) Description: Maximum drift velocity of carries |
| NEFF |
Value: 1.0 Type: Real Description: Total channel charge (fixed and mobile) coefficient (MOS2 only) |
| DELTA |
Value: 0.0 Type: Real Description: Width effect on threshold voltage |