Modelica.Electrical.Analog.Semiconductors

Semiconductor devices such as diode, MOS and bipolar transistor

Information

This package contains semiconductor devices:

• diode
• MOS transistors
• bipolar transistors
• thyristor
• triac

Most of the semiconductor devices contain a conditional heat port, which is not active by default. If it is active the loss power is calculated to be used in a thermal net. The heating variants of the semiconductor devices are provided to use the thermal port temperature in the electric calculation. That means that for a true thermal electric interaction the heating device models have to be used.

Extends from Modelica.Icons.Package (Icon for standard packages).

Package Content

Name	Description
Diode	Simple diode with heating port
Diode2	Improved diode model
ZDiode	Zener diode with 3 working areas
NMOS	Simple NMOS transistor with heating port
PMOS	Simple PMOS transistor with heating port
NPN	Simple NPN BJT according to Ebers-Moll with heating port
PNP	Simple PNP BJT according to Ebers-Moll with heating port
pow	Just a helper function for x^y in order that a symbolic engine can apply some transformations more easily
powlin	Power function (1 - x)^(-y) linearly continued for x > 0 (provided y = const.)
exlin	Exponential function linearly continued for x > Maxexp
exlin2	Exponential function linearly continued for x < MinExp and x > Maxexp
Thyristor	Simple Thyristor Model
SimpleTriac	Simple triac, based on Semiconductors.Thyristor model

Modelica.Electrical.Analog.Semiconductors.Diode

Simple diode with heating port

Information

The simple diode is an electrical one port, where a heat port is added, which is defined in the Modelica.Thermal library. It consists of the diode itself and a parallel ohmic resistance R. If useTemperatureDependency is set to true, the diode formula is:

           v/N/vt_t
i = Ids (e          - 1)

vt_t = k*temp/q

If useTemperatureDependency is set to false, the diode formula utilizes the voltage equivalent of the temperature, i.e.,

           v/Vt
i = Ids (e      - 1).

If the exponent v/N/vt_t or v/Vt, respectively, reaches the limit Maxexp, the diode characteristic is linearly continued to avoid overflow.
The thermal power is calculated by i*v.

Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n), Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.Diode2

Improved diode model

Information

This diode model is an improved version of the simple diode model. It includes a series resistance, parallel conductance, and also models reverse breakdown. The model is divided into three parts:

• lower half of reversed bias region including breakdown: -Ids·(exp(-(vd+Bv)/(N·Vt)) + 1 - 2·exp(-Bv/(2·N·Vt)))
• upper half of reverse biased region and forward biased region before conduction: Ids·(exp(vd/(N·Vt)) - 1)
• forward biased region after conduction: iVdMax + (vd - VdMax)·diVdMax

Temperature dependent behaviour is modelled when useHeatPort=true. In that case, the Vt parameter is ignored, and Vt is computed as k·T/q, where

• k is Boltzmann's constant
• T is the heat port temperature.
• q is the electron charge.

Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n), Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.ZDiode

Zener diode with 3 working areas

Information

The simple Zener diode is a one port. It consists of the diode itself and an parallel ohmic resistance R. The diode formula is:

              v/Vt                -(v+Bv)/(Nbv*Vt)
i  =  Ids ( e      - 1) - Ibv ( e                  ).

If the exponent in one of the two branches reaches the limit Maxexp, the diode characteristic is linearly continued to avoid overflow.

The Zener diode model permits (in contrast to the simple diode model) current in reverse direction if the breakdown voltage Bv (also known Zener knee voltage) is exceeded.

The thermal power is calculated by i*v.

Please note: In case of useHeatPort=true the temperature dependence of the electrical behavior is not modelled yet. The parameters are not temperature dependent.

Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n), Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.NMOS

Simple NMOS transistor with heating port

Information

The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for [Spiro1990].
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

W       L      Beta         Vt      K2     K5       dW       dL
m       m      A/V^2        V       -      -        m        m
12.e-6  4.e-6  0.062e-3    -4.5     0.24   0.61    -1.2e-6  -0.9e-6      depletion
60.e-6  3.e-6  0.048e-3     0.1     0.08   0.68    -1.2e-6  -0.9e-6      enhancement
12.e-6  4.e-6  0.0625e-3   -0.8     0.21   0.78    -1.2e-6  -0.9e-6      zero
50.e-6  8.e-6  0.0299e-3    0.24    1.144  0.7311  -5.4e-6  -4.e-6
20.e-6  6.e-6  0.041e-3     0.8     1.144  0.7311  -2.5e-6  -1.5e-6
30.e-6  9.e-6  0.025e-3    -4.0     0.861  0.878   -3.4e-6  -1.74e-6
30.e-6  5.e-6  0.031e-3     0.6     1.5    0.72     0       -3.9e-6
50.e-6  6.e-6  0.0414e-3   -3.8     0.34   0.8     -1.6e-6  -2.e-6       depletion
50.e-6  5.e-6  0.03e-3      0.37    0.23   0.86    -1.6e-6  -2.e-6       enhancement
50.e-6  6.e-6  0.038e-3    -0.9     0.23   0.707   -1.6e-6  -2.e-6       zero
20.e-6  4.e-6  0.06776e-3   0.5409  0.065  0.71    -0.8e-6  -0.2e-6
20.e-6  4.e-6  0.06505e-3   0.6209  0.065  0.71    -0.8e-6  -0.2e-6
20.e-6  4.e-6  0.05365e-3   0.6909  0.03   0.8     -0.3e-6  -0.2e-6
20.e-6  4.e-6  0.05365e-3   0.4909  0.03   0.8     -0.3e-6  -0.2e-6
12.e-6  4.e-6  0.023e-3    -4.5     0.29   0.6      0        0           depletion
60.e-6  3.e-6  0.022e-3     0.1     0.11   0.65     0        0           enhancement
12.e-6  4.e-6  0.038e-3    -0.8     0.33   0.6      0        0           zero
20.e-6  6.e-6  0.022e-3     0.8     1      0.66     0        0

References: [Spiro1990]

Extends from Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.PMOS

Simple PMOS transistor with heating port

Information

The PMOS model is a simple model of a p-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for [Spiro1990].
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

References: [Spiro1990]

Some typical parameter sets are:

W       L      Beta        Vt    K2     K5      dW       dL
m       m      A/V^2       V     -      -       m        m
50.e-6  8.e-6  0.0085e-3  -0.15  0.41   0.839  -3.8e-6  -4.0e-6
20.e-6  6.e-6  0.0105e-3  -1.0   0.41   0.839  -2.5e-6  -2.1e-6
30.e-6  5.e-6  0.0059e-3  -0.3   0.98   1.01    0       -3.9e-6
30.e-6  5.e-6  0.0152e-3  -0.69  0.104  1.1    -0.8e-6  -0.4e-6
30.e-6  5.e-6  0.0163e-3  -0.69  0.104  1.1    -0.8e-6  -0.4e-6
30.e-6  5.e-6  0.0182e-3  -0.69  0.086  1.06   -0.1e-6  -0.6e-6
20.e-6  6.e-6  0.0074e-3  -1.    0.4    0.59    0        0

Extends from Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.NPN

Simple NPN BJT according to Ebers-Moll with heating port

Information

This model is a simple model of a bipolar NPN junction transistor according to Ebers-Moll.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
A typical parameter set is (the parameter Vt is no longer used):

Bf  Br  Is     Vak  Tauf    Taur  Ccs   Cje     Cjc     Phie  Me   PHic   Mc     Gbc    Gbe
-   -   A      V    s       s     F     F       F       V     -    V      -      mS     mS
50  0.1 1e-16  0.02 0.12e-9 5e-9  1e-12 0.4e-12 0.5e-12 0.8   0.4  0.8    0.333  1e-15  1e-15

References: [Vlach1983]

Extends from Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.PNP

Simple PNP BJT according to Ebers-Moll with heating port

Information

This model is a simple model of a bipolar PNP junction transistor according to Ebers-Moll.
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
A typical parameter set is (the parameter Vt is no longer used):

Bf  Br  Is     Vak  Tauf    Taur  Ccs   Cje     Cjc     Phie  Me   PHic   Mc     Gbc    Gbe
-   -   A      V    s       s     F     F       F       V     -    V      -      mS     mS
50  0.1 1e-16  0.02 0.12e-9 5e-9  1e-12 0.4e-12 0.5e-12 0.8   0.4  0.8    0.333  1e-15  1e-15

References: [Vlach1983]

Extends from Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.pow

Just a helper function for x^y in order that a symbolic engine can apply some transformations more easily

Information

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Outputs

Modelica.Electrical.Analog.Semiconductors.powlin

Power function (1 - x)^(-y) linearly continued for x > 0 (provided y = const.)

Information

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Outputs

Modelica.Electrical.Analog.Semiconductors.exlin

Exponential function linearly continued for x > Maxexp

Information

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Outputs

Modelica.Electrical.Analog.Semiconductors.exlin2

Exponential function linearly continued for x < MinExp and x > Maxexp

Information

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Outputs

Modelica.Electrical.Analog.Semiconductors.Thyristor

Simple Thyristor Model

Information

This is a simple thyristor model with three pins: Anode, Cathode and Gate. There are three operating modes:conducting, blocking and reverse breakthrough.
As long as the thyristor is in blocking mode it behaves like a linear resistance Roff=VDRM^2/(VTM*IH). But if the voltage between anode and cathode exceeds VDRM or a positive gate current flows for a sufficient time the mode changes to conducting mode. The model stays in conducting mode until the anode current falls below the holding current IH. There is no way to switch off the thyristor via the gate. If the voltage between anode and cathode is negative, the model represents a diode (parameters Vt, Nbv) with reverse breakthrough voltage VRRM.

The dV/dt switch on is not taken into account in this model. The gate circuit is not influenced by the main circuit.

Extends from Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors

Modelica.Electrical.Analog.Semiconductors.SimpleTriac

Simple triac, based on Semiconductors.Thyristor model

Information

This is a simple TRIAC model based on the extended thyristor model Modelica.Electrical.Analog.Semiconductors.Thyristor.
Two thyristors are contrarily connected in parallel, whereas each transistor is connected with a diode.
Further information regarding the electrical component TRIAC can be detected in documentation of the ideal TRIAC model.
As an additional information: this model is based on the Modelica.Electrical.Analog.Semiconductors.Thyristor.

Attention: The model seems to be very sensitive with respect to the choice of some parameters (e.g., VDRM, VRRM). This is caused by the thyristor model. Further investigations are necessary.

Extends from Modelica.Electrical.Analog.Interfaces.ConditionalHeatPort (Partial model to include a conditional HeatPort in order to describe the power loss via a thermal network).

Parameters

Connectors