NMOS

Simple NMOS transistor with heating port

Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

The NMOS model is a simple model of a n-channel metal-oxide semiconductor FET. It differs slightly from the device used in the SPICE simulator. For more details please care for [Spiro1990].
A heating port is added for thermal electric simulation. The heating port is defined in the Modelica.Thermal library.
The model does not consider capacitances. A high drain-source resistance RDS is included to avoid numerical difficulties.

W       L      Beta         Vt      K2     K5       dW       dL
m       m      A/V^2        V       -      -        m        m
12.e-6  4.e-6  0.062e-3    -4.5     0.24   0.61    -1.2e-6  -0.9e-6      depletion
60.e-6  3.e-6  0.048e-3     0.1     0.08   0.68    -1.2e-6  -0.9e-6      enhancement
12.e-6  4.e-6  0.0625e-3   -0.8     0.21   0.78    -1.2e-6  -0.9e-6      zero
50.e-6  8.e-6  0.0299e-3    0.24    1.144  0.7311  -5.4e-6  -4.e-6
20.e-6  6.e-6  0.041e-3     0.8     1.144  0.7311  -2.5e-6  -1.5e-6
30.e-6  9.e-6  0.025e-3    -4.0     0.861  0.878   -3.4e-6  -1.74e-6
30.e-6  5.e-6  0.031e-3     0.6     1.5    0.72     0       -3.9e-6
50.e-6  6.e-6  0.0414e-3   -3.8     0.34   0.8     -1.6e-6  -2.e-6       depletion
50.e-6  5.e-6  0.03e-3      0.37    0.23   0.86    -1.6e-6  -2.e-6       enhancement
50.e-6  6.e-6  0.038e-3    -0.9     0.23   0.707   -1.6e-6  -2.e-6       zero
20.e-6  4.e-6  0.06776e-3   0.5409  0.065  0.71    -0.8e-6  -0.2e-6
20.e-6  4.e-6  0.06505e-3   0.6209  0.065  0.71    -0.8e-6  -0.2e-6
20.e-6  4.e-6  0.05365e-3   0.6909  0.03   0.8     -0.3e-6  -0.2e-6
20.e-6  4.e-6  0.05365e-3   0.4909  0.03   0.8     -0.3e-6  -0.2e-6
12.e-6  4.e-6  0.023e-3    -4.5     0.29   0.6      0        0           depletion
60.e-6  3.e-6  0.022e-3     0.1     0.11   0.65     0        0           enhancement
12.e-6  4.e-6  0.038e-3    -0.8     0.33   0.6      0        0           zero
20.e-6  6.e-6  0.022e-3     0.8     1      0.66     0        0

References: [Spiro1990]

Parameters (15)

useHeatPort

Value: useTemperatureDependency

Type: Boolean

Description: = true, if heatPort is enabled

T

Value: 293.15

Type: Temperature (K)

Description: Fixed device temperature if useHeatPort = false

W

Value: 20.e-6

Type: Length (m)

Description: Width

L

Value: 6.e-6

Type: Length (m)

Description: Length

Beta

Value: 0.041e-3

Type: Transconductance (A/V²)

Description: Transconductance parameter

Vt

Value: 0.8

Type: Voltage (V)

Description: Zero bias threshold voltage

K2

Value: 1.144

Type: Real

Description: Bulk threshold parameter

K5

Value: 0.7311

Type: Real

Description: Reduction of pinch-off region

dW

Value: -2.5e-6

Type: Length (m)

Description: Narrowing of channel

dL

Value: -1.5e-6

Type: Length (m)

Description: Shortening of channel

RDS

Value: 1e7

Type: Resistance (Ω)

Description: Drain-Source-Resistance

useTemperatureDependency

Value: false

Type: Boolean

Description: = true, if parameters Beta, K2 and Vt depend on temperature

Tnom

Value: 300.15

Type: Temperature (K)

Description: Parameter measurement temperature

kvt

Value: -6.96e-3

Type: Real

Description: Fitting parameter for Vt

kk2

Value: 6e-4

Type: Real

Description: Fitting parameter for K2

Connectors (5)

heatPort

Type: HeatPort_a

Description: Conditional heat port

D

Type: Pin

Description: Drain

G

Type: Pin

Description: Gate

S

Type: Pin

Description: Source

B

Type: Pin

Description: Bulk

Used in Examples (1)

HeatingMOSInverter

Modelica.Electrical.Analog.Examples

Heating MOS Inverter

Used in Components (1)

Nand

Modelica.Electrical.Analog.Examples.Utilities

CMOS NAND Gate (see Tietze/Schenk, page 157)