MOS

Metal-Oxide Semiconductor Field-Effect Transistor

Information

This information is part of the Modelica Standard Library maintained by the Modelica Association.

MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters (19)

mtype

Value:

Type: Integer

Description: MOSFET type: 0 - N channel, 1 - P channel

L

Value: 1e-4

Type: Length (m)

Description: Length

W

Value: 1e-4

Type: Length (m)

Description: Width

AD

Value: 0

Type: Area (m²)

Description: Area of the drain diffusion

AS

Value: 0

Type: Area (m²)

Description: Area of the source diffusion

PD

Value: 0

Type: Length (m)

Description: Perimeter of the drain junction

PS

Value: 0

Type: Length (m)

Description: Perimeter of the source junction

NRD

Value: 1

Type: Real

Description: Number of squares of the drain diffusions

NRS

Value: 1

Type: Real

Description: Number of squares of the source diffusions

OFF

Value: 0

Type: Integer

Description: Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet

IC

Value:

Type: Voltage (V)

Description: Initial condition values, not implemented yet

TEMP

Value: 27

Type: Temperature_degC (°C)

Description: Operating temperature of the device

modelcard

Value:

Type: ModelcardMOS

Description: MOSFET modelcard

p

Value: Mos1.mos1RenameParameters(modelcard, C)

Type: Mos1ModelLineParams

Description: Model line parameters

m

Value: Mos1.mos1RenameParametersDev(modelcard, mtype, W, L, AS, AS, PD, PS, NRD, NRS, OFF, IC, TEMP)

Type: Mosfet

Description: Renamed parameters

m_type

Value: if m.m_bPMOS > 0.5 then -1 else 1

Type: Integer

Description: Type of the transistor

vp

Value: Mos1.mos1ModelLineParamsInitEquations(p, C, m_type)

Type: MosModelLineVariables

Description: Model line variables

c1

Value: Mos.mosCalcInitEquations(p, C, vp, m)

Type: Mos1Calc

Description: Precalculated parameters

c2

Value: Mos.mosCalcCalcTempDependencies(p, C, vp, m, c1, m_type)

Type: Mos1Calc

Description: Precalculated parameters

Connectors (4)

G

Type: PositivePin

Description: Gate node

D

Type: PositivePin

Description: Drain node

S

Type: NegativePin

Description: Source node

B

Type: PositivePin

Description: Bulk node

Components (8)

modelcard

Type: ModelcardMOS

Description: MOSFET modelcard

C

Type: SpiceConstants

Description: General constants of SPICE simulator

p

Type: Mos1ModelLineParams

Description: Model line parameters

m

Type: Mosfet

Description: Renamed parameters

vp

Type: MosModelLineVariables

Description: Model line variables

c1

Type: Mos1Calc

Description: Precalculated parameters

c2

Type: Mos1Calc

Description: Precalculated parameters

cc

Type: CurrrentsCapacitances

Extended by (2)

M_NMOS

Modelica.Electrical.Spice3.Semiconductors

NMOS MOSFET device

M_PMOS

Modelica.Electrical.Spice3.Semiconductors

PMOS MOSFET device