MOSMetal-Oxide Semiconductor Field-Effect Transistor |
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Information
This information is part of the Modelica Standard Library maintained by the Modelica Association.
MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges
The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
Parameters (19)
| mtype |
Value: Type: Integer Description: MOSFET type: 0 - N channel, 1 - P channel |
|---|---|
| L |
Value: 1e-4 Type: Length (m) Description: Length |
| W |
Value: 1e-4 Type: Length (m) Description: Width |
| AD |
Value: 0 Type: Area (m²) Description: Area of the drain diffusion |
| AS |
Value: 0 Type: Area (m²) Description: Area of the source diffusion |
| PD |
Value: 0 Type: Length (m) Description: Perimeter of the drain junction |
| PS |
Value: 0 Type: Length (m) Description: Perimeter of the source junction |
| NRD |
Value: 1 Type: Real Description: Number of squares of the drain diffusions |
| NRS |
Value: 1 Type: Real Description: Number of squares of the source diffusions |
| OFF |
Value: 0 Type: Integer Description: Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC |
Value: Type: Voltage (V) Description: Initial condition values, not implemented yet |
| TEMP |
Value: 27 Type: Temperature_degC (°C) Description: Operating temperature of the device |
| modelcard |
Value: Type: ModelcardMOS Description: MOSFET modelcard |
| p |
Value: Mos1.mos1RenameParameters(modelcard, C) Type: Mos1ModelLineParams Description: Model line parameters |
| m |
Value: Mos1.mos1RenameParametersDev(modelcard, mtype, W, L, AS, AS, PD, PS, NRD, NRS, OFF, IC, TEMP) Type: Mosfet Description: Renamed parameters |
| m_type |
Value: if m.m_bPMOS > 0.5 then -1 else 1 Type: Integer Description: Type of the transistor |
| vp |
Value: Mos1.mos1ModelLineParamsInitEquations(p, C, m_type) Type: MosModelLineVariables Description: Model line variables |
| c1 |
Value: Mos.mosCalcInitEquations(p, C, vp, m) Type: Mos1Calc Description: Precalculated parameters |
| c2 |
Value: Mos.mosCalcCalcTempDependencies(p, C, vp, m, c1, m_type) Type: Mos1Calc Description: Precalculated parameters |
Connectors (4)
 |
G |
Type: PositivePin Description: Gate node |
|---|---|---|
|
D |
Type: PositivePin Description: Drain node |
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S |
Type: NegativePin Description: Source node |
|
B |
Type: PositivePin Description: Bulk node |
Components (8)
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modelcard |
Type: ModelcardMOS Description: MOSFET modelcard |
|---|---|---|
 |
C |
Type: SpiceConstants Description: General constants of SPICE simulator |
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p |
Type: Mos1ModelLineParams Description: Model line parameters |
 |
m |
Type: Mosfet Description: Renamed parameters |
 |
vp |
Type: MosModelLineVariables Description: Model line variables |
 |
c1 |
Type: Mos1Calc Description: Precalculated parameters |
|
c2 |
Type: Mos1Calc Description: Precalculated parameters |
 |
cc |
Type: CurrrentsCapacitances |
