ModelcardBJT2Record with technology parameters (.model) |
This information is part of the Modelica Standard Library maintained by the Modelica Association.
Modelcard parameters for BJT model, both PNP and NPN
The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.
TNOM |
Value: 27 Type: Temperature_degC (°C) Description: Parameter measurement temperature |
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IS |
Value: 1e-16 Type: Current (A) Description: Transport saturation current |
BF |
Value: 100.00 Type: Real Description: Ideal maximum forward beta F |
NF |
Value: 1.0 Type: Real Description: Forward current emission coefficientF |
NE |
Value: 1.5 Type: Real Description: B-E leakage emission coefficient |
ISE |
Value: -1e40 Type: Current (A) Description: B-E leakage saturation current, default = 0 |
ISC |
Value: -1e40 Type: Current (A) Description: B-C leakage saturation current, default = 0 |
BR |
Value: 1.0 Type: Real Description: Ideal maximum reverse beta |
NR |
Value: 1.0 Type: Real Description: Reverse current emission coefficient |
NC |
Value: 2.0 Type: Real Description: B-C leakage emission coefficient |
VAF |
Value: 0.0 Type: Voltage (V) Description: Forward Early voltage |
IKF |
Value: 0.0 Type: Current (A) Description: Forward beta roll-off corner current |
VAR |
Value: 0.0 Type: Voltage (V) Description: Reverse Early voltage |
IKR |
Value: 0.0 Type: Current (A) Description: Reverse beta roll-off corner current |
RE |
Value: 0.0 Type: Resistance (Ω) Description: Emitter resistance |
RC |
Value: 0.0 Type: Resistance (Ω) Description: Collector resistance |
IRB |
Value: 0.0 Type: Current (A) Description: Current for base resistance = (rb+rbm)/2 |
RB |
Value: 0.0 Type: Resistance (Ω) Description: Zero bias base resistance |
RBM |
Value: 0.0 Type: Resistance (Ω) Description: Minimum base resistance, default = 0.0 |
CJE |
Value: 0.0 Type: Capacitance (F) Description: Zero bias B-E depletion capacitance |
VJE |
Value: 0.75 Type: Voltage (V) Description: B-E built in potential |
MJE |
Value: 0.33 Type: Real Description: B-E junction exponential factor |
TF |
Value: 0.0 Type: Time (s) Description: Ideal forward transit time |
XTF |
Value: 0.0 Type: Real Description: Coefficient for bias dependence of TF |
ITF |
Value: 0.0 Type: Current (A) Description: High current dependence of TF, |
VTF |
Value: 0.0 Type: Voltage (V) Description: Voltage giving VBC dependence of TF |
PTF |
Value: 0.0 Type: Frequency (Hz) Description: Excess phase at freq=1/(TF*2*Pi) Hz |
CJC |
Value: 0.0 Type: Capacitance (F) Description: Zero bias B-C depletion capacitance |
VJC |
Value: 0.75 Type: Voltage (V) Description: B-C built in potential |
MJC |
Value: 0.33 Type: Real Description: B-C junction grading coefficient |
XCJC |
Value: 1.0 Type: Real Description: Fraction of B-C cap to internal base |
TR |
Value: 0.0 Type: Time (s) Description: Ideal reverse transit time |
CJS |
Value: 0.0 Type: Capacitance (F) Description: Zero bias C-S capacitance |
VJS |
Value: 0.75 Type: Voltage (V) Description: Substrate junction built-in potential |
MJS |
Value: 0.0 Type: Real Description: Substrate junction grading coefficient |
XTB |
Value: 0.0 Type: Real Description: Forward and reverse beta temperature exponent |
EG |
Value: 1.11 Type: GapEnergy (eV) Description: Energy gap for IS temperature effect on IS |
XTI |
Value: 3.0 Type: Real Description: Temperature exponent for IS |
KF |
Value: 0.0 Type: Real Description: Flicker Noise Coefficient |
AF |
Value: 1.0 Type: Real Description: Flicker Noise Exponent |
FC |
Value: 0.5 Type: Real Description: Forward bias junction fit parameter |
Modelica.Electrical.Spice3.Internal Bipolar junction transistor |
Modelica.Electrical.Spice3.Semiconductors Record for the specification of modelcard parameters |