Modelica.Electrical.Spice3.Internal.Mos1

Records and functions for MOSFETs level 1

Information

This package Mos1 contains functions and record with data of the MOSFET model level 1.

Extends from Modelica.Icons.InternalPackage (Icon for an internal package (indicating that the package should not be directly utilized by user)).

Package Content

Name Description
Modelica.Electrical.Spice3.Internal.Mos1.Mos1ModelLineParams Mos1ModelLineParams Record for Mosfet model line parameters (for level 1)
Modelica.Electrical.Spice3.Internal.Mos1.Mos1Calc Mos1Calc Further MOSFET variables (for level 1)
Modelica.Electrical.Spice3.Internal.Mos1.mos1ModelLineParamsInitEquations mos1ModelLineParamsInitEquations Initial precalculation
Modelica.Electrical.Spice3.Internal.Mos1.drainCur drainCur Drain current calculation
Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParameters mos1RenameParameters Parameter renaming to internal names
Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParametersDev mos1RenameParametersDev Device parameter renaming to internal names

Modelica.Electrical.Spice3.Internal.Mos1.Mos1ModelLineParams Modelica.Electrical.Spice3.Internal.Mos1.Mos1ModelLineParams

Record for Mosfet model line parameters (for level 1)

Information

This record Mos1ModelLineParams contains the model line parameters that are used for the MOSFET transistors level 1 in SPICE3.

Extends from Mos.MosModelLineParams (Record for Mosfet model line parameters (for level 1, 2, 3 and 6)).

Contents

NameDescription
m_jctSatCurDensityJS, Bulk jct. sat. current density, input - use tSatCurDens
m_sheetResistanceRSH, Sheet resistance [Ohm]
m_bulkJctPotentialPB, Bulk junction potential, input - use tBulkPot
m_bulkJctBotGradingCoeffMJ, Bottom grading coefficient [1/K]
m_bulkJctSideGradingCoeffMJSW, Side grading coefficient [1/K]
m_oxideThicknessTOX, Oxide thickness unit: micron
m_oxideThicknessIsGivenTOX, IsGiven value
m_gateSourceOverlapCapFactorCGS0, Gate-source overlap cap
m_gateDrainOverlapCapFactorCGD0, Gate-drain overlap cap
m_gateBulkOverlapCapFactorCGB0, Gate-bulk overlap cap
m_fNcoefKF, Flicker noise coefficient
m_fNexpAF, Flicker noise exponent
m_mjswIsGivenMJSW, IsGivenValue
m_cgsoIsGivenCGSO, IsGivenValue
m_cgdoIsGivenCGDO, IsGivenValue
m_cgboIsGivenCGBO, IsGivenValue
m_pbIsGivenPB, IsGivenValue
m_oxideCapFactor 
m_vt0VTO, Threshold voltage [V]
m_vtOIsGivenVTO IsGivenValue
m_capBDCBD, B-D junction capacitance [F]
m_capBDIsGivenCapBD IsGivenValue
m_capBSCBS, B-S junction capacitance [F]
m_capBSIsGivenCapBS IsGivenValue
m_bulkCapFactorCJ, Bottom junction cap per area [F/m2]
m_bulkCapFactorIsGivenBulk cap factor IsGivenValue
m_sideWallCapFactorCJSW, Side grading coefficient [F/m]
m_fwdCapDepCoeffFC, Forward bias junction fit parameter
m_phiPHI, Surface potential [V]
m_phiIsGivenPhi IsGivenValue
m_gammaGAMMA, Bulk threshold parameter [V]
m_gammaIsGivenGamma IsGivenValue
m_substrateDopingNSUB, Substrate doping
m_substrateDopingIsGivenSubstrate doping IsGivenValue
m_gateTypeTPG, Gate type
m_surfaceStateDensityNSS, Gate type [1/cm2]
m_surfaceStateDensityIsGivensurfaceStateDensityIsGivenValue
m_surfaceMobilityUO, Surface mobility [cm2/(V.s)]
m_latDiffLD, Lateral diffusion [m]
m_jctSatCurIS, Bulk junction sat. current [A]
m_drainResistanceRD, Drain ohmic resistance [Ohm]
m_drainResistanceIsGivenDrain resistance IsGivenValue
m_sourceResistanceRS, Source ohmic resistance [Ohm]
m_sourceResistanceIsGivenSource resistance IsGivenValue
m_transconductanceIsGivenTransconductance IsGivenValue
m_tnomTNOM, Parameter measurement temperature [K]
Initialization
m_lambdaChannel-length modulation [1/V]
m_transconductanceinput - use tTransconductance [A/V2]

Modelica.Electrical.Spice3.Internal.Mos1.Mos1Calc Modelica.Electrical.Spice3.Internal.Mos1.Mos1Calc

Further MOSFET variables (for level 1)

Information

This record Mos1Calc contains further MOSFET variables (for level 1) that are needed for the calculations.

Extends from Mos.MosCalc (Further MOSFET variables (for level 1, 2, 3 and 6)).

Contents

NameDescription
m_vdsVds, Drain-Source voltage [V]
m_vgsVgs, Gate-Source voltage [V]
m_vbsVbs, Bulk-Source voltage [V]
m_cbsIbs, B-S junction current [A]
m_gbsGbs, Bulk-Source conductance [S]
m_cbdIbd, B-D junction current [A]
m_gbdGbd, Bulk-Drain conductance [S]
m_cdrainIds [A]
m_gdsGds, Drain-Source conductance [S]
m_gmGm, Transconductance [A/V2]
m_gmbsGmbs, Bulk-Source transconductance [A/V2]
m_capbsbCbsb [F]
m_chargebsbQbsb [C]
m_capbssCbss [F]
m_chargebssQbss [C]
m_capbdbCbdb [F]
m_chargebdbQbdb [C]
m_capbdsCbds [F]
m_chargebdsQbds [C]
m_BetaBeta
m_capGSovlCgso, Gate-source overlap cap. [F]
m_capGDovlCgdo, Gate-drain overlap cap. [F]
m_capGBovlCgbo, Gate-bulk overlap cap. [F]
m_capOxCox [F]
m_vonVon, Turn-on voltage [V]
m_vdsatVdsat [V]
m_modeMode
m_lEff[m]
m_sourceResistanceRs [Ohm]
m_drainResistanceRd [Ohm]
m_tTransconductance[A/V2]
m_tSurfMob[cm2/(V.s)]
m_tPhi[V]
m_tVto[V]
m_tSatCurDens[A/m2]
m_tDrainSatCur[A]
m_tSourceSatCur[A]
m_tCBDb[F]
m_tCBDs[F]
m_tCBSb[F]
m_tCBSs[F]
m_tCj[F/m2]
m_tCjsw[F/m]
m_tBulkPot[V]
m_tDepCap[V]
m_tVbi[V]
m_VBScrit[V]
m_VBDcrit[V]
m_f1b[V]
m_f2b 
m_f3b 
m_f1s[V]
m_f2s 
m_f3s 
m_dVt[V]
m_capgd[F]
m_capgs[F]
m_capgb[F]
m_qgs[C]
m_qgd[C]
m_qgb[C]

Modelica.Electrical.Spice3.Internal.Mos1.mos1ModelLineParamsInitEquations Modelica.Electrical.Spice3.Internal.Mos1.mos1ModelLineParamsInitEquations

Initial precalculation

Information

This function mos1ModelLineParamsInitEquation does the initial precalculation of the MOSFET model line parameters for level 1.

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

NameDescription
in_pInput record model line parameters for MOS1
in_CSpice constants
in_m_typeType of MOS transistor

Outputs

NameDescription
out_vOutput record model line variables

Modelica.Electrical.Spice3.Internal.Mos1.drainCur Modelica.Electrical.Spice3.Internal.Mos1.drainCur

Drain current calculation

Information

This function drainCur calculates the main currents that flows from drain node to source node (level 1).

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

NameDescription
vb[V]
vg[V]
vds[V]
in_cInput record Mos1Calc
in_pInput record model line parameters for MOS1
in_CSpice constants
in_vpInput record model line variables
in_m_typeType of Mos transistor

Outputs

NameDescription
out_cOutput record Mos1Calc

Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParameters Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParameters

Parameter renaming to internal names

Information

This function mos1RenameParameters assigns the external (given by the user, e.g., RD) technology parameters to the internal parameters (e.g., m_drainResistance). It also does the analysis of the IsGiven values (level 1).

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

NameDescription
exModelcard with technology parameters
conSpice constants

Outputs

NameDescription
internOutput record model line parameters

Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParametersDev Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParametersDev

Device parameter renaming to internal names

Information

This function mos1RenameParametersDev assigns the external (given by the user) device parameters to the internal parameters. It also does the analysis of the IsGiven values (level 1).

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

NameDescription
ex 
mtype 
WChannel Width [m]
LChannel Length [m]
ADArea of the drain diffusion [m2]
ASArea of the source diffusion [m2]
PDPerimeter of the drain junction [m]
PSPerimeter of the source junction [m]
NRDNumber of squares of the drain diffusions
NRSNumber of squares of the source diffusions
OFFOptional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
ICInitial condition values, not implemented yet
TEMPTemperature [degC]

Outputs

NameDescription
devOutput record Mosfet
Automatically generated Tue Feb 24 16:59:22 2026.