Mos2ModelLineParams
Mos2ModelLineVariables
Mos2Calc
mos2ModelLineParamsInitEquationsRevised
drainCurRevised
mos2RenameParametersRevised
mos2RenameParametersDev
Records and functions for MOSFETs level 2
This package Mos2 contains functions and records with data of the MOSFET model level 2.
Extends from Modelica.Icons.InternalPackage (Icon for an internal package (indicating that the package should not be directly utilized by user)).
| Name | Description |
|---|---|
| Mos2ModelLineParams
|
Record for Mosfet model line parameters (for level 2) |
| Mos2ModelLineVariables
|
Record for Mosfet model line variables (for level 2) |
| Mos2Calc
|
Further MOSFET variables (for level 2) |
| mos2ModelLineParamsInitEquationsRevised
|
Initial precalculation |
| drainCurRevised
|
Drain current calculation |
| mos2RenameParametersRevised
|
Parameter renaming to internal names |
| mos2RenameParametersDev
|
Device parameter renaming to internal names |
Modelica.Electrical.Spice3.Internal.Mos2.Mos2ModelLineParamsRecord for Mosfet model line parameters (for level 2)
This record Mos1ModelLineParams contains the model line parameters that are used for the MOSFET transistors level 2 in SPICE3.
Extends from Spice3.Internal.Mos.MosModelLineParams (Record for Mosfet model line parameters (for level 1, 2, 3 and 6)).
| Name | Description |
|---|---|
| m_jctSatCurDensity | JS, Bulk jct. sat. current density, input - use tSatCurDens |
| m_sheetResistance | RSH, Sheet resistance [Ohm] |
| m_bulkJctPotential | PB, Bulk junction potential, input - use tBulkPot |
| m_bulkJctBotGradingCoeff | MJ, Bottom grading coefficient [1/K] |
| m_oxideThicknessIsGiven | TOX, IsGiven value |
| m_gateSourceOverlapCapFactor | CGS0, Gate-source overlap cap |
| m_gateDrainOverlapCapFactor | CGD0, Gate-drain overlap cap |
| m_gateBulkOverlapCapFactor | CGB0, Gate-bulk overlap cap |
| m_fNcoef | KF, Flicker noise coefficient |
| m_fNexp | AF, Flicker noise exponent |
| m_mjswIsGiven | MJSW, IsGivenValue |
| m_cgsoIsGiven | CGSO, IsGivenValue |
| m_cgdoIsGiven | CGDO, IsGivenValue |
| m_cgboIsGiven | CGBO, IsGivenValue |
| m_pbIsGiven | PB, IsGivenValue |
| m_oxideCapFactor | |
| m_vt0 | VTO, Threshold voltage [V] |
| m_vtOIsGiven | VTO IsGivenValue |
| m_capBD | CBD, B-D junction capacitance [F] |
| m_capBDIsGiven | CapBD IsGivenValue |
| m_capBS | CBS, B-S junction capacitance [F] |
| m_capBSIsGiven | CapBS IsGivenValue |
| m_bulkCapFactor | CJ, Bottom junction cap per area [F/m2] |
| m_bulkCapFactorIsGiven | Bulk cap factor IsGivenValue |
| m_sideWallCapFactor | CJSW, Side grading coefficient [F/m] |
| m_fwdCapDepCoeff | FC, Forward bias junction fit parameter |
| m_phi | PHI, Surface potential [V] |
| m_phiIsGiven | Phi IsGivenValue |
| m_gamma | GAMMA, Bulk threshold parameter [V] |
| m_gammaIsGiven | Gamma IsGivenValue |
| m_substrateDoping | NSUB, Substrate doping |
| m_substrateDopingIsGiven | Substrate doping IsGivenValue |
| m_gateType | TPG, Gate type |
| m_surfaceStateDensity | NSS, Gate type [1/cm2] |
| m_surfaceStateDensityIsGiven | surfaceStateDensityIsGivenValue |
| m_surfaceMobility | UO, Surface mobility [cm2/(V.s)] |
| m_latDiff | LD, Lateral diffusion [m] |
| m_jctSatCur | IS, Bulk junction sat. current [A] |
| m_drainResistance | RD, Drain ohmic resistance [Ohm] |
| m_drainResistanceIsGiven | Drain resistance IsGivenValue |
| m_sourceResistance | RS, Source ohmic resistance [Ohm] |
| m_sourceResistanceIsGiven | Source resistance IsGivenValue |
| m_transconductanceIsGiven | Transconductance IsGivenValue |
| m_tnom | TNOM, Parameter measurement temperature [K] |
| m_narrowFactor | DELTA, Width effect on threshold |
| m_critFieldExp | UEXP, Crit. field exp for mob. deg |
| m_critField | UCRIT, Crit. field for mob. degradation [V/cm] |
| m_maxDriftVel | VMAX, Maximum carrier drift velocity [m/s] |
| m_junctionDepth | XJ, Junction depth [m] |
| m_channelCharge | NEFF, Total channel charge coeff [C] |
| m_fastSurfaceStateDensity | NFS, Fast surface state density [1/cm2] |
| m_xd | |
| Initialization | |
| m_bulkJctSideGradingCoeff | MJSW, Side grading coefficient [1/K] |
| m_oxideThickness | TOX, Oxide thickness unit: micron |
| m_lambda | Channel-length modulation [1/V] |
| m_transconductance | input - use tTransconductance [A/V2] |
Modelica.Electrical.Spice3.Internal.Mos2.Mos2ModelLineVariablesRecord for Mosfet model line variables (for level 2)
This record MosModelLineVariables contains the model line variables that are used for the MOSFET transistors level 2 SPICE3.
Extends from Spice3.Internal.Mos.MosModelLineVariables (Record for Mosfet model line variables (for level 1)).
| Name | Description |
|---|---|
| m_oxideCapFactor | |
| m_vt0 | [V] |
| m_phi | [V] |
| m_gamma | |
| m_transconductance | [A/V2] |
| m_bulkCapFactor | |
| m_substrateDoping | |
| m_xd |
Modelica.Electrical.Spice3.Internal.Mos2.Mos2CalcFurther MOSFET variables (for level 2)
This record Mos1Calc contains further MOSFET variables (for level 2) that are needed for the calculations.
Extends from Spice3.Internal.Mos.MosCalc (Further MOSFET variables (for level 1, 2, 3 and 6)).
| Name | Description |
|---|---|
| m_vds | Vds, Drain-Source voltage [V] |
| m_vgs | Vgs, Gate-Source voltage [V] |
| m_vbs | Vbs, Bulk-Source voltage [V] |
| m_cbs | Ibs, B-S junction current [A] |
| m_gbs | Gbs, Bulk-Source conductance [S] |
| m_cbd | Ibd, B-D junction current [A] |
| m_gbd | Gbd, Bulk-Drain conductance [S] |
| m_cdrain | Ids [A] |
| m_gds | Gds, Drain-Source conductance [S] |
| m_gm | Gm, Transconductance [A/V2] |
| m_gmbs | Gmbs, Bulk-Source transconductance [A/V2] |
| m_capbsb | Cbsb [F] |
| m_chargebsb | Qbsb [C] |
| m_capbss | Cbss [F] |
| m_chargebss | Qbss [C] |
| m_capbdb | Cbdb [F] |
| m_chargebdb | Qbdb [C] |
| m_capbds | Cbds [F] |
| m_chargebds | Qbds [C] |
| m_Beta | Beta |
| m_capGSovl | Cgso, Gate-source overlap cap. [F] |
| m_capGDovl | Cgdo, Gate-drain overlap cap. [F] |
| m_capGBovl | Cgbo, Gate-bulk overlap cap. [F] |
| m_capOx | Cox [F] |
| m_von | Von, Turn-on voltage [V] |
| m_vdsat | Vdsat [V] |
| m_mode | Mode |
| m_lEff | [m] |
| m_sourceResistance | Rs [Ohm] |
| m_drainResistance | Rd [Ohm] |
| m_tTransconductance | [A/V2] |
| m_tSurfMob | [cm2/(V.s)] |
| m_tPhi | [V] |
| m_tVto | [V] |
| m_tSatCurDens | [A/m2] |
| m_tDrainSatCur | [A] |
| m_tSourceSatCur | [A] |
| m_tCBDb | [F] |
| m_tCBDs | [F] |
| m_tCBSb | [F] |
| m_tCBSs | [F] |
| m_tCj | [F/m2] |
| m_tCjsw | [F/m] |
| m_tBulkPot | [V] |
| m_tDepCap | [V] |
| m_tVbi | [V] |
| m_VBScrit | [V] |
| m_VBDcrit | [V] |
| m_f1b | [V] |
| m_f2b | |
| m_f3b | |
| m_f1s | [V] |
| m_f2s | |
| m_f3s | |
| m_dVt | [V] |
| m_capgd | [F] |
| m_capgs | [F] |
| m_capgb | [F] |
| m_qgs | [C] |
| m_qgd | [C] |
| m_qgb | [C] |
Modelica.Electrical.Spice3.Internal.Mos2.mos2ModelLineParamsInitEquationsRevisedInitial precalculation
This function mos2ModelLineParamsInitEquationsRevised does the initial precalculation of the MOSFET model line parameters for level 2.
Extends from Modelica.Icons.Function (Icon for functions).
| Name | Description |
|---|---|
| in_p | Input record model line parameters for MOS2 |
| in_m_type | Type of MOS transistor |
| Name | Description |
|---|---|
| out_p | Input record model line parameters for MOS2 |
Modelica.Electrical.Spice3.Internal.Mos2.drainCurRevisedDrain current calculation
This function drainCurRevised calculates the main currents that flows from drain node to source node (level 2).
Extends from Modelica.Icons.Function (Icon for functions).
| Name | Description |
|---|---|
| vbs | [V] |
| vgs | [V] |
| vds | [V] |
| in_m | Record MOSFET |
| in_c | Input record Mos2Calc |
| in_p | Input record model line parameters for MOS2 |
| in_m_type | Type of MOS transistor |
| Name | Description |
|---|---|
| out_c | Output record Mos2Calc |
Modelica.Electrical.Spice3.Internal.Mos2.mos2RenameParametersRevisedParameter renaming to internal names
This function mos2RenameParametersRevised assigns the external (given by the user, e.g., RD) technology parameters to the internal parameters (e.g., m_drainResistance). It also does the analysis of the IsGiven values (level 2).
Extends from Modelica.Icons.Function (Icon for functions).
| Name | Description |
|---|---|
| ex | Modelcard with technology parameters |
| Name | Description |
|---|---|
| intern | Output record model line parameters |
Modelica.Electrical.Spice3.Internal.Mos2.mos2RenameParametersDevDevice parameter renaming to internal names
This function mos2RenameParametersDev assigns the external (given by the user) device parameters to the internal parameters. It also does the analysis of the IsGiven values (level 2).
Extends from Modelica.Icons.Function (Icon for functions).
| Name | Description |
|---|---|
| ex | |
| mtype | |
| W | Width of channel region [m] |
| L | Length of channel region [m] |
| AD | Area of drain diffusion [m2] |
| AS | Area of source diffusion [m2] |
| PD | Drain perimeter [m] |
| PS | Source perimeter [m] |
| NRD | Length of drain squares |
| NRS | Length of Source squares |
| OFF | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
| IC | Initial condition values, not implemented yet |
| TEMP | Temperature [degC] |
| Name | Description |
|---|---|
| dev | Output record Mosfet |