Modelica.Electrical.Spice3.Internal

Collection of functions and records derived from the C++ Spice library

Information

The package Internal contains functions and auxiliary models that are necessary for the Spice3 models. The package should not be used by the users of the Spice3-library.

Extends from Modelica.Icons.InternalPackage (Icon for an internal package (indicating that the package should not be directly utilized by user)).

Package Content

Name	Description
MOS	Metal-Oxide Semiconductor Field-Effect Transistor
ModelcardMOS	Record with technology parameters (.model)
MOS2	Metal-Oxide Semiconductor Field-Effect Transistor
ModelcardMOS2	Record with technology parameters (.model)
BJT2	Bipolar junction transistor
ModelcardBJT2	Record with technology parameters (.model)
BJT	Bipolar junction transistor, obsolete, use model BJT2
ModelcardBJT	Record with technology parameters (.model), obsolete model, please use ModelcardBJT2
JFET	Junction Field-Effect Transistor
ModelcardJFET	Record with technology parameters (.model)
DIODE	Diode model
ModelcardDIODE	Record with technology parameters (.model)
R_SEMI	Semiconductor resistor
ModelcardR	Record with technology parameters (.model)
C_SEMI	Semiconductor capacitor
ModelcardC	Record with technology parameters (.model)
SpiceConstants	General constants of SPICE simulator
MaterialParameters
Functions	Equations for semiconductor calculation
SpiceRoot	Basic records and functions
Model	Device Temperature
Mosfet	Functions and records for MOSFETs
Mos	Records and functions for MOSFETs level 1,2,3,6
Mos1	Records and functions for MOSFETs level 1
Mos2	Records and functions for MOSFETs level 2
Diode	Records and functions for diode model
Rsemiconductor	Records and functions for semiconductor resistor model
Bjt	Records and functions for bjt model
Bjt3	Records and functions for bjt model, obsolete
Fet
Jfet	Records and functions for Jfet
Csemiconductor

Modelica.Electrical.Spice3.Internal.MOS

Metal-Oxide Semiconductor Field-Effect Transistor

Information

MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Name	Description
mtype	MOSFET type: 0 - N channel, 1 - P channel
L	Length [m]
W	Width [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC	Initial condition values, not implemented yet [V]
TEMP	Operating temperature of the device [degC]
modelcard	MOSFET modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
G	gate node
D	drain node
S	source node
B	bulk node

Modelica.Electrical.Spice3.Internal.ModelcardMOS

Record with technology parameters (.model)

Information

Modelcard parameters for MOSFET model, both N and P channel, LEVEL 1: Shichman-Hodges

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Parameters

Name	Description
VTO	Zero-bias threshold voltage, default 0 [V]
KP	Transconductance parameter, default 2e-5 [A/V2]
GAMMA	Bulk threshold parameter, default 0
PHI	Surface potential, default 0.6 [V]
LAMBDA	Channel-length modulation, default 0 [1/V]
RD	Drain ohmic resistance, default 0 [Ohm]
RS	Source ohmic resistance, default 0 [Ohm]
CBD	Zero-bias B-D junction capacitance, default 0 [F]
CBS	Zero-bias B-S junction capacitance, default 0 [F]
IS	Bulk junction saturation current [A]
PB	Bulk junction potential [V]
CGSO	Gate-source overlap capacitance per meter channel width [F/m]
CGDO	Gate-drain overlap capacitance per meter channel width [F/m]
CGBO	Gate-bulk overlap capacitance per meter channel width [F/m]
RSH	Drain and source diffusion sheet resistance [Ohm]
CJ	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
MJ	Bulk junction bottom grading coefficient
CJSW	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
MJSW	Bulk junction sidewall grading coefficient
JS	Bulk junction saturation current per sq-meter of junction area [A/m2]
TOX	Oxide thickness, default 1e-7 [m]
NSUB	Substrate doping, default 0
NSS	Surface state density [1/cm2]
TPG	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
LD	Lateral diffusion [m]
UO	Surface mobility [cm2/(V.s)]
KF	Flicker noise coefficient
AF	Flicker noise exponent
FC	Coefficient for forward-bias depletion capacitance formula
TNOM	Parameter measurement temperature, default 27 [degC]

Modelica.Electrical.Spice3.Internal.MOS2

Metal-Oxide Semiconductor Field-Effect Transistor

Information

MOSFET model, both N and P channel, LEVEL 2

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Parameters

Name	Description
mtype	MOSFET type: 0 - N channel, 1 - P channel
L	Length [m]
W	Width [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC_VDS	Initial condition value (VDS, not implemented yet) [V]
IC_VGS	Initial condition value (VGS, not implemented yet) [V]
IC_VBS	Initial condition value (VBS, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
modelcard	MOSFET modelcard
IC	Initial condition values, not implemented yet [V]
C	General constants of SPICE simulator

Connectors

Name	Description
G	gate node
D	drain node
S	source node
B	bulk node

Modelica.Electrical.Spice3.Internal.ModelcardMOS2

Record with technology parameters (.model)

Information

Modelcard parameters for MOSFET model, both N and P channel, LEVEL 2

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records), Spice3.Internal.ModelcardMOS (Record with technology parameters (.model)).

Parameters

Name	Description
VTO	Zero-bias threshold voltage, default 0 [V]
KP	Transconductance parameter, default 2e-5 [A/V2]
GAMMA	Bulk threshold parameter, default 0
PHI	Surface potential, default 0.6 [V]
LAMBDA	Channel-length modulation, default 0 [1/V]
RD	Drain ohmic resistance, default 0 [Ohm]
RS	Source ohmic resistance, default 0 [Ohm]
CBD	Zero-bias B-D junction capacitance, default 0 [F]
CBS	Zero-bias B-S junction capacitance, default 0 [F]
IS	Bulk junction saturation current [A]
PB	Bulk junction potential [V]
CGSO	Gate-source overlap capacitance per meter channel width [F/m]
CGDO	Gate-drain overlap capacitance per meter channel width [F/m]
CGBO	Gate-bulk overlap capacitance per meter channel width [F/m]
RSH	Drain and source diffusion sheet resistance [Ohm]
CJ	Zero-bias bulk junction bottom cap. per sq-meter of junction area [F/m2]
MJ	Bulk junction bottom grading coefficient
CJSW	Zero-bias junction sidewall cap. per meter of junction perimeter [F/m]
MJSW	Bulk junction sidewall grading coefficient
JS	Bulk junction saturation current per sq-meter of junction area [A/m2]
TOX	Oxide thickness, default 1e-7 [m]
NSUB	Substrate doping, default 0
NSS	Surface state density [1/cm2]
TPG	Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate
LD	Lateral diffusion [m]
UO	Surface mobility [cm2/(V.s)]
KF	Flicker noise coefficient
AF	Flicker noise exponent
FC	Coefficient for forward-bias depletion capacitance formula
TNOM	Parameter measurement temperature, default 27 [degC]
NFS	Fast surface state density [1/cm2]
XJ	Metallurgical junction depth [m]
UCRIT	Critical field for mobility degradation (MOS2 only) [V/cm]
UEXP	Critical field exponent in mobility degradation (MOS2 only)
VMAX	Maximum drift velocity of carries [m/s]
NEFF	Total channel charge (fixed and mobile) coefficient (MOS2 only)
DELTA	Width effect on threshold voltage

Modelica.Electrical.Spice3.Internal.BJT2

Bipolar junction transistor

Information

Bipolar junction transistor model, both NPN and PNP

The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Spice3.Interfaces.ConditionalSubstrate (Partial model to include a conditional substrate node).

Parameters

Name	Description
useSubstrateNode	=true, if SubstrateNode is enabled
TBJT	Type of transistor (NPN=1, PNP=-1)
AREA	Area factor
OFF	Optional initial condition: false - IC not used, true - IC used, not implemented yet
IC_VBE	Initial condition value (VBC, not implemented yet) [V]
IC_VCE	Initial condition value (VBE, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
SENS_AREA	Flag to request sensitivity WRT area, not implemented yet
modelcard	BJT modelcard

Connectors

Name	Description
B	Base node
C	Collector node
E	Emitter node
S

Modelica.Electrical.Spice3.Internal.ModelcardBJT2

Record with technology parameters (.model)

Information

Modelcard parameters for BJT model, both PNP and NPN

The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Parameters

Name	Description
TNOM	Parameter measurement temperature [degC]
IS	Transport saturation current [A]
BF	Ideal maximum forward beta F
NF	Forward current emission coefficientF
NE	B-E leakage emission coefficient
ISE	B-E leakage saturation current, default = 0 [A]
ISC	B-C leakage saturation current, default = 0 [A]
BR	Ideal maximum reverse beta
NR	Reverse current emission coefficient
NC	B-C leakage emission coefficient
VAF	Forward Early voltage [V]
IKF	Forward beta roll-off corner current [A]
VAR	Reverse Early voltage [V]
IKR	Reverse beta roll-off corner current [A]
RE	Emitter resistance [Ohm]
RC	Collector resistance [Ohm]
IRB	Current for base resistance = (rb+rbm)/2 [A]
RB	Zero bias base resistance [Ohm]
RBM	Minimum base resistance, default = 0.0 [Ohm]
CJE	Zero bias B-E depletion capacitance [F]
VJE	B-E built in potential [V]
MJE	B-E junction exponential factor
TF	Ideal forward transit time [s]
XTF	Coefficient for bias dependence of TF
ITF	High current dependence of TF, [A]
VTF	Voltage giving VBC dependence of TF [V]
PTF	Excess phase at freq=1/(TF2Pi) Hz [Hz]
CJC	Zero bias B-C depletion capacitance [F]
VJC	B-C built in potential [V]
MJC	B-C junction grading coefficient
XCJC	Fraction of B-C cap to internal base
TR	Ideal reverse transit time [s]
CJS	Zero bias C-S capacitance [F]
VJS	Substrate junction built-in potential [V]
MJS	Substrate junction grading coefficient
XTB	Forward and reverse beta temperature exponent
EG	Energy gap for IS temperature effect on IS [eV]
XTI	Temperature exponent for IS
KF	Flicker Noise Coefficient
AF	Flicker Noise Exponent
FC	Forward bias junction fit parameter

Modelica.Electrical.Spice3.Internal.BJT

Bipolar junction transistor, obsolete, use model BJT2

Information

This model is obsolete, please use BJT2

Bipolar junction transistor model

The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.ObsoleteModel (Icon for classes that are obsolete and will be removed in later versions).

Parameters

Name	Description
TBJT	Type of transistor (NPN=1, PNP=-1)
AREA	Area factor
OFF	Optional initial condition: false - IC not used, true - IC used, not implemented yet
IC_VCE	Initial condition value (VBE, not implemented yet [V]
IC_VBE	Initial condition value (VBC, not implemented yet [V]
TEMP	Operating temperature of the device [degC]
SENS_AREA	Flag to request sensitivity WRT area, not implemented yet
modelcard	BJT modelcard
Con	General constants of SPICE simulator

Connectors

Name	Description
B	Base node
C	Collector node
E	Emitter node

Modelica.Electrical.Spice3.Internal.ModelcardBJT

Record with technology parameters (.model), obsolete model, please use ModelcardBJT2

Information

This record is obsolete, please use ModelcardBJT2

Modelcard parameters for BJT model, both PNP and NPN

The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records), Modelica.Icons.ObsoleteModel (Icon for classes that are obsolete and will be removed in later versions).

Parameters

Name	Description
TNOM	Parameter measurement temperature, default 27 [degC]
IS	Transport saturation current [A]
BF	Ideal maximum forward beta F
NF	Forward current emission coefficientF
NE	B-E leakage emission coefficient
ISE	B-E leakage saturation current, default = 0 [A]
ISC	B-C leakage saturation current, default = 0 [A]
BR	Ideal maximum reverse beta
NR	Reverse current emission coefficient
NC	B-C leakage emission coefficient
VAF	Forward Early voltage [V]
IKF	Forward beta roll-off corner current [A]
VAR	Reverse Early voltage [V]
IKR	Reverse beta roll-off corner current [A]
RE	Emitter resistance [Ohm]
RC	Collector resistance [Ohm]
IRB	Current for base resistance = (rb+rbm)/2 [A]
RB	Zero bias base resistance [Ohm]
RBM	Minimum base resistance, default = 0.0 [Ohm]
CJE	Zero bias B-E depletion capacitance [F]
VJE	B-E built in potential [V]
MJE	B-E junction exponential factor
TF	Ideal forward transit time [s]
XTF	Coefficient for bias dependence of TF
ITF	High current dependence of TF, [A]
VTF	Voltage giving VBC dependence of TF [V]
PTF	Excess phase at freq=1/(TF2Pi) Hz [degC]
CJC	Zero bias B-C depletion capacitance [F]
VJC	B-C built in potential [V]
MJC	B-C junction grading coefficient
XCJC	Fraction of B-C cap to internal base
TR	Ideal reverse transit time [s]
CJS	Zero bias C-S capacitance [F]
VJS	Substrate junction built-in potential [V]
MJS	Substrate junction grading coefficient
XTB	Forward and reverse beta temperature exponent
EG	Energy gap for IS temperature effect on IS [eV]
XTI	Temperature exponent for IS
KF	Flicker Noise Coefficient
AF	Flicker Noise Exponent
FC	Forward bias junction fit parameter

Modelica.Electrical.Spice3.Internal.JFET

Junction Field-Effect Transistor

Information

JFET model, both N and P channel

The package Internal is not for user access. There all function, records and data are stored, that are needed for modeling the semiconductor models of the package Semiconductors.

Parameters

Name	Description
mtype	JFET type: 0 - N channel, 1 - P channel
AREA	Number of parallel connected identical elements
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC_VDS	Initial condition value (VDS, not implemented yet) [V]
IC_VGS	Initial condition value (VGS, not implemented yet) [V]
UIC	Use initial conditions: true, if initial condition is used
TEMP	Operating temperature of the device [degC]
modelcard	JFET modelcard

Connectors

Name	Description
G	gate node
D	drain node
S	source node

Modelica.Electrical.Spice3.Internal.ModelcardJFET

Record with technology parameters (.model)

Information

Modelcard parameters for JFET model, both N and P channel

The package Internal is not for user access. There all function, records and data are stored, that are needed for modeling the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Parameters

Name	Description
CGS	Zero-bias G-S junction capacitance, default 0 [F]
CGD	Zero-bias G-D junction capacitance, default 0 [F]
IS	Saturation current of pn junctions [A]
FC	Coefficient for forward-bias depletion capacitance formula
RD	Drain ohmic resistance, default 0 [Ohm]
RS	Source ohmic resistance, default 0 [Ohm]
TNOM	Parameter measurement temperature [degC]
VTO	Zero-bias threshold voltage, default -2 [V]
B	Dotierungsverlauf parameter, default 1 [1/V]
BETA	Output admittance parameter, default 1e-4
LAMBDA	Channel-length modulation, default 0 [1/V]
PB	Junction potential of pn junctions [V]
AF	Flicker noise exponent
KF	Flicker noise coefficient

Modelica.Electrical.Spice3.Internal.DIODE

Diode model

Information

DIODE model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Electrical.Analog.Interfaces.TwoPin (Component with two electrical pins).

Parameters

Name	Description
AREA	Area factor
OFF	Optional initial condition: false - IC not used, true - IC used, not implemented yet
IC	Initial condition value (VD, not implemented yet [V]
TEMP	Operating temperature of the device [degC]
SENS_AREA	Flag to request sensitivity WRT area, not implemented yet
modelcarddiode	DIODE modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
p	Positive electrical pin
n	Negative electrical pin

Modelica.Electrical.Spice3.Internal.ModelcardDIODE

Record with technology parameters (.model)

Information

Modelcard parameters for DIODE model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Parameters

Name	Description
IS	Saturation Current [A]
RS	Ohmic resistance [Ohm]
N	Emission coefficient
TT	Transit time [s]
CJO	Junction capacitance [F]
VJ	Junction Potential [V]
M	Grading coefficient
EG	Activation Energy [eV]
XTI	Saturation current temperature exponent
FC	Forward bias junction fit parameter
BV	Reverse breakdown voltage, default infinity [V]
IBV	Current at reverse breakdown voltage [A]
TNOM	Parameter measurement temperature [degC]
KF	Flicker noise coefficient
AF	Flicker noise exponent
G	Ohmic conductance [S]

Modelica.Electrical.Spice3.Internal.R_SEMI

Semiconductor resistor

Information

Semiconductor resistance model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n).

Parameters

Name	Description
R	Resistance, if specified, geometrical information is overwritten [Ohm]
TEMP	Temperature of resistor [degC]
L	Length of the resistor [m]
W	Width of the resistor, default DEFW (modelcard) [m]
SENS_AREA	Parameter for sensitivity analyses, not implemented yet
modelcard	Resistor modelcard
C	General constants of SPICE simulator

Connectors

Name	Description
p	Positive electrical pin
n	Negative electrical pin

Modelica.Electrical.Spice3.Internal.ModelcardR

Record with technology parameters (.model)

Information

Modelcard parameters for semiconductor resistance model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Parameters

Name	Description
TC1	First order temperature coefficient [Ohm/K]
TC2	Second order temperature coefficient [Ohm/K2]
RSH	Sheet resistance [Ohm]
TNOM	Parameter measurement temperature, default 27 [degC]
DEFW	Default device width [m]
NARROW	Narrowing of resistor due to side etching [m]

Modelica.Electrical.Spice3.Internal.C_SEMI

Semiconductor capacitor

Information

Semiconductor capacitance model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Electrical.Analog.Interfaces.OnePort (Component with two electrical pins p and n and current i from p to n).

Parameters

Name	Description
C	Capacitance, if specified, geometrical information is overwritten [F]
TEMP	Temperature of capacitor [degC]
L	Length of the capacitor [m]
W	Width of the capacitor, default DEFW (modelcard) [m]
SENS_AREA	Parameter for sensitivity analyses, not implemented yet
IC	Initial value [V]
UIC	Use initial conditions: true, if initial condition is used
modelcard	Capacitor modelcard

Connectors

Name	Description
p	Positive electrical pin
n	Negative electrical pin

Modelica.Electrical.Spice3.Internal.ModelcardC

Record with technology parameters (.model)

Information

Modelcard parameters for semiconductor capacitance model

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Parameters

Name	Description
CJ	Junction bottom capacitance F/meters2 [F/m2]
CJSW	Junction sidewall capacitance F/meters [F/m]
DEFW	Default device width [m]
NARROW	Narrowing due to side etching [m]

Modelica.Electrical.Spice3.Internal.SpiceConstants

General constants of SPICE simulator

Information

General constants used by SPICE

The package Internal is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Modelica.Electrical.Spice3.Internal.MaterialParameters

Information

Definition of Material parameters

The package Repository is not for user access. There all function, records and data are stored, that are needed for the semiconductor models of the package Semiconductors.

Extends from Modelica.Icons.Record (Icon for records).

Automatically generated Thu Dec 19 17:20:02 2019.