Modelica.Electrical.Spice3.Internal.Mos1

Records and functions for MOSFETs level 1

Information

This package Mos1 contains functions and record with data of the MOSFET model level 1.

Extends from Modelica.Icons.InternalPackage (Icon for an internal package (indicating that the package should not be directly utilized by user)).

Package Content

Name	Description
Mos1ModelLineParams	Record for Mosfet model line parameters (for level 1)
Mos1Calc	Further MOSFET variables (for level 1)
mos1ModelLineParamsInitEquations	Initial precalculation
drainCur	Drain current calculation
mos1RenameParameters	Parameter renaming to internal names
mos1RenameParametersDev	Device parameter renaming to internal names

Modelica.Electrical.Spice3.Internal.Mos1.Mos1ModelLineParams

Record for Mosfet model line parameters (for level 1)

Information

This record Mos1ModelLineParams contains the model line parameters that are used for the MOSFET transistors level 1 in SPICE3.

Extends from Mos.MosModelLineParams (Record for Mosfet model line parameters (for level 1, 2, 3 and 6)).

Parameters

Name	Description
Initialization
m_jctSatCurDensity	JS, Bulk jct. sat. current density, input - use tSatCurDens
m_sheetResistance	RSH, Sheet resistance [Ohm]
m_bulkJctPotential	PB, Bulk junction potential, input - use tBulkPot
m_bulkJctBotGradingCoeff	MJ, Bottom grading coefficient [1/K]
m_bulkJctSideGradingCoeff	MJSW, Side grading coefficient [1/K]
m_oxideThickness	TOX, Oxide thickness unit: micron
m_gateSourceOverlapCapFactor	CGS0, Gate-source overlap cap
m_gateDrainOverlapCapFactor	CGD0, Gate-drain overlap cap
m_gateBulkOverlapCapFactor	CGB0, Gate-bulk overlap cap
m_fNcoef	KF, Flicker noise coefficient
m_fNexp	AF, Flicker noise exponent
m_oxideCapFactor
m_vt0	VTO, Threshold voltage [V]
m_capBD	CBD, B-D junction capacitance [F]
m_capBS	CBS, B-S junction capacitance [F]
m_bulkCapFactor	CJ, Bottom junction cap per area [F/m2]
m_sideWallCapFactor	CJSW, Side grading coefficient [F/m]
m_fwdCapDepCoeff	FC, Forward bias junction fit parameter
m_phi	PHI, Surface potential [V]
m_gamma	GAMMA, Bulk threshold parameter [V]
m_substrateDoping	NSUB, Substrate doping
m_gateType	TPG, Gate type
m_surfaceStateDensity	NSS, Gate type [1/cm2]
m_surfaceStateDensityIsGiven	surfaceStateDensityIsGivenValue
m_surfaceMobility	UO, Surface mobility [cm2/(V.s)]
m_latDiff	LD, Lateral diffusion [m]
m_jctSatCur	IS, Bulk junction sat. current [A]
m_drainResistance	RD, Drain ohmic resistance [Ohm]
m_sourceResistance	RS, Source ohmic resistance [Ohm]

Modelica.Electrical.Spice3.Internal.Mos1.Mos1Calc

Further MOSFET variables (for level 1)

Information

This record Mos1Calc contains further MOSFET variables (for level 1) that are needed for the calculations.

Extends from Mos.MosCalc (Further MOSFET variables (for level 1, 2, 3 and 6)).

Parameters

Name	Description
Initialization
m_mode	Mode
m_tTransconductance	[A/V2]
m_tSurfMob	[cm2/(V.s)]
m_tPhi	[V]
m_tVto	[V]
m_tSatCurDens	[A/m2]
m_tDrainSatCur	[A]
m_tSourceSatCur	[A]
m_tCBDb	[F]
m_tCBDs	[F]
m_tCBSb	[F]
m_tCBSs	[F]
m_tCj	[F/m2]
m_tCjsw	[F/m]
m_tBulkPot	[V]
m_tDepCap	[V]
m_tVbi	[V]
m_VBScrit	[V]
m_VBDcrit	[V]
m_f1b	[V]
m_f2b
m_f3b
m_f1s	[V]
m_f2s
m_f3s
m_dVt	[V]
m_capgd	[F]
m_capgs	[F]
m_capgb	[F]
m_qgs	[C]
m_qgd	[C]
m_qgb	[C]

Modelica.Electrical.Spice3.Internal.Mos1.mos1ModelLineParamsInitEquations

Initial precalculation

Information

This function mos1ModelLineParamsInitEquation does the initial precalculation of the MOSFET model line parameters for level 1.

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Name	Description
in_p	Input record model line parameters for MOS1
in_C	Spice constants
in_m_type	Type of MOS transistor

Outputs

Name	Description
out_v	Output record model line variables

Modelica.Electrical.Spice3.Internal.Mos1.drainCur

Drain current calculation

Information

This function drainCur calculates the main currents that flows from drain node to source node (level 1).

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Name	Description
vb	[V]
vg	[V]
vds	[V]
in_c	Input record Mos1Calc
in_p	Input record model line parameters for MOS1
in_C	Spice constants
in_vp	Input record model line variables
in_m_type	Type of Mos transistor

Outputs

Name	Description
out_c	Output record Mos1Calc

Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParameters

Parameter renaming to internal names

Information

This function mos1RenameParameters assigns the external (given by the user, e.g., RD) technology parameters to the internal parameters (e.g., m_drainResistance). It also does the analysis of the IsGiven values (level 1).

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Name	Description
ex	Modelcard with technology parameters
con	Spice constants

Outputs

Name	Description
intern	Output record model line parameters

Modelica.Electrical.Spice3.Internal.Mos1.mos1RenameParametersDev

Device parameter renaming to internal names

Information

This function mos1RenameParametersDev assigns the external (given by the user) device parameters to the internal parameters. It also does the analysis of the IsGiven values (level 1).

Extends from Modelica.Icons.Function (Icon for functions).

Inputs

Name	Description
ex
mtype
W	Channel Width [m]
L	Channel Length [m]
AD	Area of the drain diffusion [m2]
AS	Area of the source diffusion [m2]
PD	Perimeter of the drain junction [m]
PS	Perimeter of the source junction [m]
NRD	Number of squares of the drain diffusions
NRS	Number of squares of the source diffusions
OFF	Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet
IC	Initial condition values, not implemented yet
TEMP	Temperature [degC]

Outputs

Name	Description
dev	Output record Mosfet

Automatically generated Thu Dec 19 17:20:02 2019.