This package contains both the semiconductor devices models of SPICE3, which are available, and their modelcards. The user should apply the models of this package.
All models of this package extend models of the package Repository, which contains the functions, parameters and data which are necessary to model the behaviour of the semiconductor devices. The modelcard records contain the SPICE3 technology parameters, which can be adjusted for more than one MOS simultaneously.
Extends from Modelica.Icons.Package (Icon for standard packages).
| Name | Description |
|---|---|
C_Capacitor | Semiconductor capacitor |
D_DIODE | Diode model |
J_NJFJFET | N-channel Junction Field-Effect Transistor model (JFET) |
J_PJFJFET | P-channel Junction Field-Effect Transistor model (JFET) |
M_NMOS | NMOS MOSFET device |
M_NMOS2 | NMOS MOSFET device |
M_PMOS | PMOS MOSFET device |
M_PMOS2 | PMOS MOSFET device |
ModelcardBJT | Record for the specification of modelcard parameters |
ModelcardCAPACITOR | Record for the specification of modelcard parameters for Semiconductor Capacitor |
ModelcardDIODE | Record for the specification of modelcard parameters |
ModelcardJFET | Record for the specification of modelcard parameters for JFET |
ModelcardMOS | Record for the specification of modelcard parameters |
ModelcardMOS2 | Record for the specification of modelcard parameters |
ModelcardRESISTOR | Record for the specification of modelcard parameters |
Q_NPNBJT | Bipolar junction transistor |
Q_PNPBJT | Bipolar junction transistor |
R_Resistor | Semiconductor resistor from SPICE3 |
The model M_PMOS is a P channel MOSFET transistor with fixed level 1: Shichman-Hodges model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.MOS (Metal-Oxide Semiconductor Field-Effect Transistor).
| Type | Name | Default | Description |
|---|---|---|---|
final Integer | mtype | 1 | MOSFET type: 0 - N channel, 1 - P channel |
Length | L | 1e-4 | Length |
Length | W | 1e-4 | Width |
Area | AD | 0 | Area of the drain diffusion |
Area | AS | 0 | Area of the source diffusion |
Length | PD | 0 | Perimeter of the drain junction |
Length | PS | 0 | Perimeter of the source junction |
Real | NRD | 1 | Number of squares of the drain diffusions |
Real | NRS | 1 | Number of squares of the source diffusions |
Integer | OFF | 0 | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC | Initial condition values, not implemented yet | |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardMOS | modelcard | MOSFET modelcard | |
final Mos1ModelLineParams | p | Mos1.mos1RenameParameters(modelcard, C) | Model line parameters |
final Mosfet | m | Mos1.mos1RenameParametersDev(modelcard, mtype, W, L, AS, AS, PD, PS, NRD, NRS, OFF, IC, TEMP) | Renamed parameters |
final Integer | m_type | if 0.5 < m.m_bPMOS then -1 else 1 | Type of the transistor |
final MosModelLineVariables | vp | Mos1.mos1ModelLineParamsInitEquations(p, C, m_type) | Model line variables |
final Mos1Calc | c1 | Mos.mosCalcInitEquations(p, C, vp, m) | Precalculated parameters |
final Mos1Calc | c2 | Mos.mosCalcCalcTempDependencies(p, C, vp, m, c1, m_type) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
PositivePin | B | bulk node |
The model M_NMOS is a N channel MOSFET transistor with fixed level 1: Shichman-Hodges model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.MOS (Metal-Oxide Semiconductor Field-Effect Transistor).
| Type | Name | Default | Description |
|---|---|---|---|
final Integer | mtype | 0 | MOSFET type: 0 - N channel, 1 - P channel |
Length | L | 1e-4 | Length |
Length | W | 1e-4 | Width |
Area | AD | 0 | Area of the drain diffusion |
Area | AS | 0 | Area of the source diffusion |
Length | PD | 0 | Perimeter of the drain junction |
Length | PS | 0 | Perimeter of the source junction |
Real | NRD | 1 | Number of squares of the drain diffusions |
Real | NRS | 1 | Number of squares of the source diffusions |
Integer | OFF | 0 | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC | Initial condition values, not implemented yet | |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardMOS | modelcard | MOSFET modelcard | |
final Mos1ModelLineParams | p | Mos1.mos1RenameParameters(modelcard, C) | Model line parameters |
final Mosfet | m | Mos1.mos1RenameParametersDev(modelcard, mtype, W, L, AS, AS, PD, PS, NRD, NRS, OFF, IC, TEMP) | Renamed parameters |
final Integer | m_type | if 0.5 < m.m_bPMOS then -1 else 1 | Type of the transistor |
final MosModelLineVariables | vp | Mos1.mos1ModelLineParamsInitEquations(p, C, m_type) | Model line variables |
final Mos1Calc | c1 | Mos.mosCalcInitEquations(p, C, vp, m) | Precalculated parameters |
final Mos1Calc | c2 | Mos.mosCalcCalcTempDependencies(p, C, vp, m, c1, m_type) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
PositivePin | B | bulk node |
Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardMOS (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter Voltage | VTO | Zero-bias threshold voltage, default 0 |
parameter Transconductance | KP | Transconductance parameter, default 2e-5 |
parameter Real | GAMMA | Bulk threshold parameter, default 0 |
parameter Voltage | PHI | Surface potential, default 0.6 |
parameter InversePotential | LAMBDA | Channel-length modulation, default 0 |
parameter Resistance | RD | Drain ohmic resistance, default 0 |
parameter Resistance | RS | Source ohmic resistance, default 0 |
parameter Capacitance | CBD | Zero-bias B-D junction capacitance, default 0 |
parameter Capacitance | CBS | Zero-bias B-S junction capacitance, default 0 |
parameter Current | IS | Bulk junction saturation current |
parameter Voltage | PB | Bulk junction potential |
parameter Permittivity | CGSO | Gate-source overlap capacitance per meter channel width |
parameter Permittivity | CGDO | Gate-drain overlap capacitance per meter channel width |
parameter Permittivity | CGBO | Gate-bulk overlap capacitance per meter channel width |
parameter Resistance | RSH | Drain and source diffusion sheet resistance |
parameter CapacitancePerArea | CJ | Zero-bias bulk junction bottom cap. per sq-meter of junction area |
parameter Real | MJ | Bulk junction bottom grading coefficient |
parameter Permittivity | CJSW | Zero-bias junction sidewall cap. per meter of junction perimeter |
parameter Real | MJSW | Bulk junction sidewall grading coefficient |
parameter CurrentDensity | JS | Bulk junction saturation current per sq-meter of junction area |
parameter Length | TOX | Oxide thickness, default 1e-7 |
parameter Real | NSUB | Substrate doping, default 0 |
parameter PerArea_cm | NSS | Surface state density |
parameter Real | TPG | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
parameter Length | LD | Lateral diffusion |
parameter Area_cmPerVoltageSecond | UO | Surface mobility |
parameter Real | KF | Flicker noise coefficient |
parameter Real | AF | Flicker noise exponent |
parameter Real | FC | Coefficient for forward-bias depletion capacitance formula |
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
constant Integer | LEVEL | Model level: Shichman-Hodges |
The model M_NMOS is a N channel MOSFET transistor with fixed level 2:
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.MOS2 (Metal-Oxide Semiconductor Field-Effect Transistor).
| Type | Name | Default | Description |
|---|---|---|---|
final Integer | mtype | 0 | MOSFET type: 0 - N channel, 1 - P channel |
Length | L | 1e-4 | Length |
Length | W | 1e-4 | Width |
Area | AD | 0 | Area of the drain diffusion |
Area | AS | 0 | Area of the source diffusion |
Length | PD | 0 | Perimeter of the drain junction |
Length | PS | 0 | Perimeter of the source junction |
Real | NRD | 1 | Number of squares of the drain diffusions |
Real | NRS | 1 | Number of squares of the source diffusions |
Integer | OFF | 0 | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC_VDS | -1e+40 | Initial condition value (VDS, not implemented yet) |
Voltage | IC_VGS | -1e+40 | Initial condition value (VGS, not implemented yet) |
Voltage | IC_VBS | -1e+40 | Initial condition value (VBS, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardMOS2 | modelcard | MOSFET modelcard | |
final Mos2ModelLineParams | p | Spice3.Internal.Mos2.mos2RenameParametersRevised(modelcard) | Model line parameters |
final Mosfet | m | Spice3.Internal.Mosfet.mosfetRenameParametersDev(W, L, AD, AS, PD, PS, NRD, NRS, OFF, IC_VDS, IC_VGS, IC_VBS, UIC, TEMP) | Renamed parameters |
final Mosfet | m1 | Spice3.Internal.Mosfet.mosfetInitEquations(m) | |
final Integer | m_type | if 0.5 < m.m_bPMOS then -1 else 1 | Type of the transistor |
final Mos2ModelLineParams | p1 | Spice3.Internal.Mos2.mos2ModelLineParamsInitEquationsRevised(p, m_type) | Model line variables |
final Mos2Calc | c11 | Spice3.Internal.Mos.mos2CalcInitEquationsRevised(p1, m1) | Precalculated parameters |
final Mos2Calc | c22 | Spice3.Internal.Mos.mos2CalcCalcTempDependenciesRevised(p1, m1, c11, m_type) | Precalculated parameters |
Voltage | IC | Initial condition values, not implemented yet | |
final Mos2ModelLineVariables | vp | Spice3.Internal.Mos2.mos2ModelLineParamsInitEquations(p, C, m_type) | Model line variables |
final Mos2Calc | c1 | Spice3.Internal.Mos.mos2CalcInitEquations(p, C, vp, m) | Precalculated parameters |
final Mos2Calc | c2 | Spice3.Internal.Mos.mos2CalcCalcTempDependencies(p, C, vp, m, c1, m_type) | Precalculated parameters |
final Mos2ModelLineParams | p_obsolete | Spice3.Internal.Mos2.mos2RenameParameters(modelcard, C) | Model line parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
PositivePin | B | bulk node |
The model M_PMOS is a P channel MOSFET transistor with fixed level 2:
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.MOS2 (Metal-Oxide Semiconductor Field-Effect Transistor).
| Type | Name | Default | Description |
|---|---|---|---|
final Integer | mtype | 1 | MOSFET type: 0 - N channel, 1 - P channel |
Length | L | 1e-4 | Length |
Length | W | 1e-4 | Width |
Area | AD | 0 | Area of the drain diffusion |
Area | AS | 0 | Area of the source diffusion |
Length | PD | 0 | Perimeter of the drain junction |
Length | PS | 0 | Perimeter of the source junction |
Real | NRD | 1 | Number of squares of the drain diffusions |
Real | NRS | 1 | Number of squares of the source diffusions |
Integer | OFF | 0 | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC_VDS | -1e+40 | Initial condition value (VDS, not implemented yet) |
Voltage | IC_VGS | -1e+40 | Initial condition value (VGS, not implemented yet) |
Voltage | IC_VBS | -1e+40 | Initial condition value (VBS, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardMOS2 | modelcard | MOSFET modelcard | |
final Mos2ModelLineParams | p | Spice3.Internal.Mos2.mos2RenameParametersRevised(modelcard) | Model line parameters |
final Mosfet | m | Spice3.Internal.Mosfet.mosfetRenameParametersDev(W, L, AD, AS, PD, PS, NRD, NRS, OFF, IC_VDS, IC_VGS, IC_VBS, UIC, TEMP) | Renamed parameters |
final Mosfet | m1 | Spice3.Internal.Mosfet.mosfetInitEquations(m) | |
final Integer | m_type | if 0.5 < m.m_bPMOS then -1 else 1 | Type of the transistor |
final Mos2ModelLineParams | p1 | Spice3.Internal.Mos2.mos2ModelLineParamsInitEquationsRevised(p, m_type) | Model line variables |
final Mos2Calc | c11 | Spice3.Internal.Mos.mos2CalcInitEquationsRevised(p1, m1) | Precalculated parameters |
final Mos2Calc | c22 | Spice3.Internal.Mos.mos2CalcCalcTempDependenciesRevised(p1, m1, c11, m_type) | Precalculated parameters |
Voltage | IC | Initial condition values, not implemented yet | |
final Mos2ModelLineVariables | vp | Spice3.Internal.Mos2.mos2ModelLineParamsInitEquations(p, C, m_type) | Model line variables |
final Mos2Calc | c1 | Spice3.Internal.Mos.mos2CalcInitEquations(p, C, vp, m) | Precalculated parameters |
final Mos2Calc | c2 | Spice3.Internal.Mos.mos2CalcCalcTempDependencies(p, C, vp, m, c1, m_type) | Precalculated parameters |
final Mos2ModelLineParams | p_obsolete | Spice3.Internal.Mos2.mos2RenameParameters(modelcard, C) | Model line parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
PositivePin | B | bulk node |
Technology model parameters of MOSFET transistor with fixed level 1: Shichman-Hodges model
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardMOS2 (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter Voltage | VTO | Zero-bias threshold voltage, default 0 |
parameter Transconductance | KP | Transconductance parameter, default 2e-5 |
parameter Real | GAMMA | Bulk threshold parameter, default 0 |
parameter Voltage | PHI | Surface potential, default 0.6 |
parameter InversePotential | LAMBDA | Channel-length modulation, default 0 |
parameter Resistance | RD | Drain ohmic resistance, default 0 |
parameter Resistance | RS | Source ohmic resistance, default 0 |
parameter Capacitance | CBD | Zero-bias B-D junction capacitance, default 0 |
parameter Capacitance | CBS | Zero-bias B-S junction capacitance, default 0 |
parameter Current | IS | Bulk junction saturation current |
parameter Voltage | PB | Bulk junction potential |
parameter Permittivity | CGSO | Gate-source overlap capacitance per meter channel width |
parameter Permittivity | CGDO | Gate-drain overlap capacitance per meter channel width |
parameter Permittivity | CGBO | Gate-bulk overlap capacitance per meter channel width |
parameter Resistance | RSH | Drain and source diffusion sheet resistance |
parameter CapacitancePerArea | CJ | Zero-bias bulk junction bottom cap. per sq-meter of junction area |
parameter Real | MJ | Bulk junction bottom grading coefficient |
parameter Permittivity | CJSW | Zero-bias junction sidewall cap. per meter of junction perimeter |
parameter Real | MJSW | Bulk junction sidewall grading coefficient |
parameter CurrentDensity | JS | Bulk junction saturation current per sq-meter of junction area |
parameter Length | TOX | Oxide thickness, default 1e-7 |
parameter Real | NSUB | Substrate doping, default 0 |
parameter PerArea_cm | NSS | Surface state density |
parameter Real | TPG | Type of gate material: +1 opp. to substrate, -1 same as substrate, 0 Al gate |
parameter Length | LD | Lateral diffusion |
parameter Area_cmPerVoltageSecond | UO | Surface mobility |
parameter Real | KF | Flicker noise coefficient |
parameter Real | AF | Flicker noise exponent |
parameter Real | FC | Coefficient for forward-bias depletion capacitance formula |
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
constant Integer | LEVEL | Model level: Shichman-Hodges |
parameter PerArea_cm | NFS | Fast surface state density |
parameter Length | XJ | Metallurgical junction depth |
parameter ElectricFieldStrength_cm | UCRIT | Critical field for mobility degradation (MOS2 only) |
parameter Real | UEXP | Critical field exponent in mobility degradation (MOS2 only) |
parameter Velocity | VMAX | Maximum drift velocity of carries |
parameter Real | NEFF | Total channel charge (fixed and mobile) coefficient (MOS2 only) |
parameter Real | DELTA | Width effect on threshold voltage |
The model Q_NPNBJT is a NPN bipolar junction transistor model: Modified Gummel-Poon.
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.BJT2 (Bipolar junction transistor).
| Type | Name | Default | Description |
|---|---|---|---|
Boolean | useSubstrateNode | false | =true, if SubstrateNode is enabled |
final Real | TBJT | 1 | Type of transistor (NPN=1, PNP=-1) |
Real | AREA | 1 | Area factor |
Boolean | OFF | false | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
Voltage | IC_VBE | -1e+40 | Initial condition value (VBC, not implemented yet) |
Voltage | IC_VCE | -1e+40 | Initial condition value (VBE, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
Boolean | SENS_AREA | false | Flag to request sensitivity WRT area, not implemented yet |
ModelcardBJT2 | modelcard | BJT modelcard | |
final BjtModelLineParams | p | Spice3.Internal.Bjt.bjtRenameParameters(modelcard, TBJT) | Model line parameters |
final Bjt | dev | Spice3.Internal.Bjt.bjtRenameParametersDev(AREA, OFF, IC_VBE, IC_VCE, UIC, SENS_AREA, TEMP) | Renamed parameters |
final BjtModelLineParams | p1 | Spice3.Internal.Bjt.bjtModelLineInitEquations(p) | Model line variables |
final Bjt | dev1 | Spice3.Internal.Bjt.bjtInitEquations(dev, p1) | Precalculated parameters |
final BjtCalc | c | Spice3.Internal.Bjt.bjtCalcTempDependencies(dev1, p1) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | B | Base node |
PositivePin | C | Collector node |
NegativePin | E | Emitter node |
PositivePin | S |
The model Q_PNPBJT is a PNP bipolar junction transistor model: Modified Gummel-Poon.
The models from the package Semiconductors accesses to the package Internal where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.BJT2 (Bipolar junction transistor).
| Type | Name | Default | Description |
|---|---|---|---|
Boolean | useSubstrateNode | false | =true, if SubstrateNode is enabled |
final Real | TBJT | -1 | Type of transistor (NPN=1, PNP=-1) |
Real | AREA | 1 | Area factor |
Boolean | OFF | false | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
Voltage | IC_VBE | -1e+40 | Initial condition value (VBC, not implemented yet) |
Voltage | IC_VCE | -1e+40 | Initial condition value (VBE, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
Boolean | SENS_AREA | false | Flag to request sensitivity WRT area, not implemented yet |
ModelcardBJT2 | modelcard | BJT modelcard | |
final BjtModelLineParams | p | Spice3.Internal.Bjt.bjtRenameParameters(modelcard, TBJT) | Model line parameters |
final Bjt | dev | Spice3.Internal.Bjt.bjtRenameParametersDev(AREA, OFF, IC_VBE, IC_VCE, UIC, SENS_AREA, TEMP) | Renamed parameters |
final BjtModelLineParams | p1 | Spice3.Internal.Bjt.bjtModelLineInitEquations(p) | Model line variables |
final Bjt | dev1 | Spice3.Internal.Bjt.bjtInitEquations(dev, p1) | Precalculated parameters |
final BjtCalc | c | Spice3.Internal.Bjt.bjtCalcTempDependencies(dev1, p1) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | B | Base node |
PositivePin | C | Collector node |
NegativePin | E | Emitter node |
PositivePin | S |
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Technology parameters of the modified Gummel-Poon bipolar junction transistor model
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardBJT2 (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter Temp_C | TNOM | Parameter measurement temperature |
parameter Current | IS | Transport saturation current |
parameter Real | BF | Ideal maximum forward beta F |
parameter Real | NF | Forward current emission coefficientF |
parameter Real | NE | B-E leakage emission coefficient |
parameter Current | ISE | B-E leakage saturation current, default = 0 |
constant Real | C2 | Obsolete parameter name, default = 0 |
parameter Current | ISC | B-C leakage saturation current, default = 0 |
constant Real | C4 | Obsolete parameter name, default = 0 |
parameter Real | BR | Ideal maximum reverse beta |
parameter Real | NR | Reverse current emission coefficient |
parameter Real | NC | B-C leakage emission coefficient |
parameter Voltage | VAF | Forward Early voltage |
parameter Current | IKF | Forward beta roll-off corner current |
parameter Voltage | VAR | Reverse Early voltage |
parameter Current | IKR | Reverse beta roll-off corner current |
parameter Resistance | RE | Emitter resistance |
parameter Resistance | RC | Collector resistance |
parameter Current | IRB | Current for base resistance = (rb+rbm)/2 |
parameter Resistance | RB | Zero bias base resistance |
parameter Resistance | RBM | Minimum base resistance, default = 0.0 |
parameter Capacitance | CJE | Zero bias B-E depletion capacitance |
parameter Voltage | VJE | B-E built in potential |
parameter Real | MJE | B-E junction exponential factor |
parameter Time | TF | Ideal forward transit time |
parameter Real | XTF | Coefficient for bias dependence of TF |
parameter Current | ITF | High current dependence of TF, |
parameter Voltage | VTF | Voltage giving VBC dependence of TF |
parameter Frequency | PTF | Excess phase at freq=1/(TF*2*Pi) Hz |
parameter Capacitance | CJC | Zero bias B-C depletion capacitance |
parameter Voltage | VJC | B-C built in potential |
parameter Real | MJC | B-C junction grading coefficient |
parameter Real | XCJC | Fraction of B-C cap to internal base |
parameter Time | TR | Ideal reverse transit time |
parameter Capacitance | CJS | Zero bias C-S capacitance |
parameter Voltage | VJS | Substrate junction built-in potential |
parameter Real | MJS | Substrate junction grading coefficient |
parameter Real | XTB | Forward and reverse beta temperature exponent |
parameter GapEnergy | EG | Energy gap for IS temperature effect on IS |
parameter Real | XTI | Temperature exponent for IS |
parameter Real | KF | Flicker Noise Coefficient |
parameter Real | AF | Flicker Noise Exponent |
parameter Real | FC | Forward bias junction fit parameter |
J_PJFJFET is a P-channel junction field-effect transistor.
The junction field-effect transistor is derived from the FET model of Shichman and Hodges.
The models from the package Semiconductors accesses to the package Internal where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.JFET (Junction Field-Effect Transistor).
| Type | Name | Default | Description |
|---|---|---|---|
final Integer | mtype | 1 | JFET type: 0 - N channel, 1 - P channel |
Real | AREA | Number of parallel connected identical elements | |
Boolean | OFF | false | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC_VDS | -1e+40 | Initial condition value (VDS, not implemented yet) |
Voltage | IC_VGS | -1e+40 | Initial condition value (VGS, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardJFET | modelcard | JFET modelcard | |
final JfetModelLine | p | Modelica.Electrical.Spice3.Internal.Jfet.jfetRenameParameters(modelcard) | Model line parameters |
final Fet | m | Modelica.Electrical.Spice3.Internal.Fet.fetRenameParametersDev(AREA, OFF, IC_VDS, IC_VGS, UIC, TEMP) | Renamed parameters |
final Integer | m_type | if 0.5 < mtype then -1 else 1 | Type of the transistor |
final JfetModelLine | p1 | Modelica.Electrical.Spice3.Internal.Jfet.jfetInitEquations(m, p) | Precalculated parameters |
final JfetModelLine | p2 | Modelica.Electrical.Spice3.Internal.Jfet.jfetModelLineInitEquations(p1) | Model line variables |
final Fet | m1 | Modelica.Electrical.Spice3.Internal.Jfet.jfetCalcTempDependencies(m, p2) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
J_NJFJFET is a N-channel junction field-effect transistor.
The junction field-effect transistor is derived from the FET model of Shichman and Hodges.
The models from the package Semiconductors accesses to the package Internal where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Internal.
Extends from Modelica.Electrical.Spice3.Internal.JFET (Junction Field-Effect Transistor).
| Type | Name | Default | Description |
|---|---|---|---|
final Integer | mtype | 0 | JFET type: 0 - N channel, 1 - P channel |
Real | AREA | Number of parallel connected identical elements | |
Boolean | OFF | false | Optional initial condition: 0 - IC not used, 1 - IC used, not implemented yet |
Voltage | IC_VDS | -1e+40 | Initial condition value (VDS, not implemented yet) |
Voltage | IC_VGS | -1e+40 | Initial condition value (VGS, not implemented yet) |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
Temp_C | TEMP | 27 | Operating temperature of the device |
ModelcardJFET | modelcard | JFET modelcard | |
final JfetModelLine | p | Modelica.Electrical.Spice3.Internal.Jfet.jfetRenameParameters(modelcard) | Model line parameters |
final Fet | m | Modelica.Electrical.Spice3.Internal.Fet.fetRenameParametersDev(AREA, OFF, IC_VDS, IC_VGS, UIC, TEMP) | Renamed parameters |
final Integer | m_type | if 0.5 < mtype then -1 else 1 | Type of the transistor |
final JfetModelLine | p1 | Modelica.Electrical.Spice3.Internal.Jfet.jfetInitEquations(m, p) | Precalculated parameters |
final JfetModelLine | p2 | Modelica.Electrical.Spice3.Internal.Jfet.jfetModelLineInitEquations(p1) | Model line variables |
final Fet | m1 | Modelica.Electrical.Spice3.Internal.Jfet.jfetCalcTempDependencies(m, p2) | Precalculated parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | G | gate node |
PositivePin | D | drain node |
NegativePin | S | source node |
Technology parameters of the junction field-effect transistor model.
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardJFET (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter Capacitance | CGS | Zero-bias G-S junction capacitance, default 0 |
parameter Capacitance | CGD | Zero-bias G-D junction capacitance, default 0 |
parameter Current | IS | Saturation current of pn junctions |
parameter Real | FC | Coefficient for forward-bias depletion capacitance formula |
parameter Resistance | RD | Drain ohmic resistance, default 0 |
parameter Resistance | RS | Source ohmic resistance, default 0 |
parameter Temp_C | TNOM | Parameter measurement temperature |
parameter Voltage | VTO | Zero-bias threshold voltage, default -2 |
parameter InversePotential | B | Dotierungsverlauf parameter, default 1 |
parameter Real | BETA | Output admittance parameter, default 1e-4 |
parameter InversePotential | LAMBDA | Channel-length modulation, default 0 |
parameter Voltage | PB | Junction potential of pn junctions |
parameter Real | AF | Flicker noise exponent |
parameter Real | KF | Flicker noise coefficient |
The model D_DIODE is a Junction diode model
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.DIODE (Diode model).
| Type | Name | Default | Description |
|---|---|---|---|
Real | AREA | 1 | Area factor |
Boolean | OFF | false | Optional initial condition: false - IC not used, true - IC used, not implemented yet |
Voltage | IC | Initial condition value (VD, not implemented yet | |
Temp_C | TEMP | 27 | Operating temperature of the device |
Boolean | SENS_AREA | Flag to request sensitivity WRT area, not implemented yet | |
ModelcardDIODE | modelcarddiode | DIODE modelcard | |
final DiodeModelLineParams | param | Diode.diodeRenameParameters(modelcarddiode, C) | Model line parameters |
final DiodeParams | dp | Diode.diodeRenameParametersDev(TEMP, AREA, IC, OFF, SENS_AREA) | Renamed parameters |
final Model | m | Diode.diodeRenameParametersDevTemp(TEMP) | Renamed parameters |
final DiodeVariables | c1 | Diode.diodeInitEquations(param) | Precalculated values |
final DiodeCalc | c2 | Diode.diodeCalcTempDependencies(param, dp, m, c1) | Precalculated values |
| Type | Name | Description |
|---|---|---|
PositivePin | p | Positive electrical pin |
NegativePin | n | Negative electrical pin |
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Technology parameters of the junction diode model
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardDIODE (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter Current | IS | Saturation Current |
parameter Resistance | RS | Ohmic resistance |
parameter Real | N | Emission coefficient |
parameter Time | TT | Transit time |
parameter Capacitance | CJO | Junction capacitance |
parameter Voltage | VJ | Junction Potential |
parameter Real | M | Grading coefficient |
parameter ActivationEnergy | EG | Activation Energy |
parameter Real | XTI | Saturation current temperature exponent |
parameter Real | FC | Forward bias junction fit parameter |
parameter Voltage | BV | Reverse breakdown voltage, default infinity |
parameter Current | IBV | Current at reverse breakdown voltage |
parameter Temp_C | TNOM | Parameter measurement temperature |
parameter Real | KF | Flicker noise coefficient |
parameter Real | AF | Flicker noise exponent |
parameter Conductance | G | Ohmic conductance |
The model R_Resistor is a Semiconductor resistor model.
The models from the package Semiconductors accesses to the package Repository where all functions,
records and data are stored and modeled that are needed for the semiconductor models.
The package Semiconductors is for user access but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.R_SEMI (Semiconductor resistor).
| Type | Name | Default | Description |
|---|---|---|---|
Resistance | R | -1e+40 | Resistance, if specified, geometrical information is overwritten |
Temp_C | TEMP | -1e+40 | Temperature of resistor |
Length | L | -1e+40 | Length of the resistor |
Length | W | -1e+40 | Width of the resistor, default DEFW (modelcard) |
Boolean | SENS_AREA | false | Parameter for sensitivity analyses, not implemented yet |
ModelcardR | modelcard | Resistor modelcard | |
final ResistorModelLineParams | lp | Rsemiconductor.resistorRenameParameters(modelcard, C) | Model Line Parameters |
final ResistorParams | rp | Rsemiconductor.resistorRenameParametersDev(R, W, L, TEMP, SENS_AREA, C) | Renamed parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | p | Positive electrical pin |
NegativePin | n | Negative electrical pin |
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Technology parameters of the semiconductor resistor model
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardR (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter LinearTemperatureCoefficientResistance | TC1 | First order temperature coefficient |
parameter QuadraticTemperatureCoefficientResistance | TC2 | Second order temperature coefficient |
parameter Resistance | RSH | Sheet resistance |
parameter Temp_C | TNOM | Parameter measurement temperature, default 27 |
parameter Length | DEFW | Default device width |
parameter Length | NARROW | Narrowing of resistor due to side etching |
C_Capacitor is a Semiconductor Capacitor model.
This capacitor model allows the calculation of the actual capacitance value from strictly geometric information and the specification of the process.
The models from the package Semiconductors accesses to the package Repository where all functions, records and data are stored and modeled that are needed for the semiconductor models. The package Semiconductors is for user access, but not the package Repository.
Extends from Modelica.Electrical.Spice3.Internal.C_SEMI (Semiconductor capacitor).
| Type | Name | Default | Description |
|---|---|---|---|
Capacitance | C | -1e+40 | Capacitance, if specified, geometrical information is overwritten |
Temp_C | TEMP | 27 | Temperature of capacitor |
Length | L | Length of the capacitor | |
Length | W | -1e+40 | Width of the capacitor, default DEFW (modelcard) |
Boolean | SENS_AREA | false | Parameter for sensitivity analyses, not implemented yet |
Voltage | IC | 0 | Initial value |
Boolean | UIC | false | Use initial conditions: true, if initial condition is used |
ModelcardC | modelcard | Capacitor modelcard | |
final CapacitorModelLineParams | lp | Modelica.Electrical.Spice3.Internal.Csemiconductor.capacitorRenameParameters(modelcard) | Model Line Parameters |
final Capacitor | cp | Modelica.Electrical.Spice3.Internal.Csemiconductor.capacitorRenameParametersDev(C, W, L, TEMP, SENS_AREA, lp) | Renamed parameters |
| Type | Name | Description |
|---|---|---|
PositivePin | p | Positive electrical pin |
NegativePin | n | Negative electrical pin |
Technology parameters of the semiconductor capacitor model.
In modelcards, that are typical for SPICE3, the so called technology parameters are stored. These parameters are usually set for more than one semiconductor device in a circuit, e.g., the temperature of a whole electrical circuit.
Extends from Modelica.Icons.Record (Icon for records) and Modelica.Electrical.Spice3.Internal.ModelcardC (Record with technology parameters (.model)).
| Type | Name | Description |
|---|---|---|
parameter CapacitancePerArea | CJ | Junction bottom capacitance F/meters2 |
parameter Permittivity | CJSW | Junction sidewall capacitance F/meters |
parameter Length | DEFW | Default device width |
parameter Length | NARROW | Narrowing due to side etching |
Generated 2018-12-12 12:10:51 EST by MapleSim.