This information is part of the Modelica Standard Library maintained by the Modelica Association.

This Mosfet Characterization model is one of the five benchmark circuits described in the SPICE3 Version e3 User's Manual (see information of package Spice3).

This circuit is a very simple one than consists of an NMOS transistor level 1 that is connected to voltage sources at gate and drain node whereas the drain voltage source supplies the operating voltage. The user is recommended to simulate from t=0 to t=1e-7s and observe the gate node voltage ("VGS.p.v") and the transistor current ("M1.D.i"). It can be seen that the current is increasing with increasing gate voltage which means the conductivity of the transistor is increasing. The opposite case occurs for decreasing gate voltage.

Original SPICE3 netlist of the MOSFET characterization circuit:

MOS OUTPUT CHARACTERISTICS

.OPTIONS NODE NOPAGE

VDS 3 0

VGS 2 0

M1 1 2 0 0 MOD1 L=4U W=6U AD=10P AS=10P

*VIDS MEASURES ID, WE COULD HAVE USED VDS, BUT IT WOULD BE NEGATIVE VIDS 3 1
.MODEL MOD1 NMOS VTO=-2 NSUB=1.0E15 UO=550

.DC VDS 0 10 .5 VGS 0 5 1

.END

MOD1	Value: Type: ModelcardMOS